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Qiu Peng, Liu Heng, Zhu Xiao-Li, Tian Feng, Du Meng-Chao, Qiu Hong-Yu, Chen Guan-Liang, Hu Yu-Yu, Kong De-Lin, Yang Jin, Wei Hui-Yun, Peng Ming-Zeng, Zheng Xin-He.Atomic layer deposition and application of group III nitrides semiconductor and their alloys. Acta Physica Sinica, 2024, 73(3): 038102.doi:10.7498/aps.73.20230832 |
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Qu Zi-Han, Zhao Yang, Ma Fei, You Jing-Bi.Preparation of high-performance large-area perovskite solar cells by atomic layer deposition of metal oxide buffer layer. Acta Physica Sinica, 2024, 73(9): 098802.doi:10.7498/aps.73.20240218 |
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Li Zhong-Xiang, Wang Shu-Ya, Huang Zi-Qiang, Wang Chen, Mu Qing.Preparation of Al2O3tunnel barrier layer in atome-level controlled Josephson junction. Acta Physica Sinica, 2022, 71(21): 218102.doi:10.7498/aps.71.20220820 |
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Guo Qin-Min, Qin Zhi-Hui.Development and application of vapor deposition technology in atomic manufacturing. Acta Physica Sinica, 2021, 70(2): 028101.doi:10.7498/aps.70.20201436 |
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Zhu Jing-Yan, Zou Shuai, Sun Hua, Su Xiao-Dong.Analyses of heat dissipation of direct-cooling backsheets of crystalline silicon photovoltaic modules at ambient temperatures. Acta Physica Sinica, 2021, 70(9): 098802.doi:10.7498/aps.70.20201741 |
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Li Ye, Wang Xi-Xi, Wei Hui-Yun, Qiu Peng, He Ying-Feng, Song Yi-Meng, Duan Zhang, Shen Cheng-Tao, Peng Ming-Zeng, Zheng Xin-He.Enhancement of interface transportation for quantum dot solar cells using ultrathin InN by atomic layer deposition. Acta Physica Sinica, 2021, 70(18): 187702.doi:10.7498/aps.70.20210554 |
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Lin Ming-Yue, Ju Bo, Li Yan, Chen Xue-Lian.Performance of 2-bromoterephthalic acid passivated all-inorganic perovskite cells. Acta Physica Sinica, 2021, 70(12): 128803.doi:10.7498/aps.70.20202005 |
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Liu Zi, Zhang Heng, Wu Hao, Liu Chang.Enhancement of photoluminescence from zinc oxide by aluminum nanoparticle surface plasmon. Acta Physica Sinica, 2019, 68(10): 107301.doi:10.7498/aps.68.20190062 |
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Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
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Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo.First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica, 2018, 67(16): 166401.doi:10.7498/aps.67.20180626 |
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
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Li Yong, Li Hui-Qi, Xia Yang, Liu Bang-Wu.Study on atomic layer deposition preparation of core-shell structured nanometer materials. Acta Physica Sinica, 2013, 62(19): 198102.doi:10.7498/aps.62.198102 |
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Dong Ya-Bin, Xia Yang, Li Chao-Bo, Lu Wei-Er, Rao Zhi-Peng, Zhang Yang, Zhang Xiang, Ye Tian-Chun.Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor. Acta Physica Sinica, 2013, 62(14): 147306.doi:10.7498/aps.62.147306 |
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Jia He-Shun, Luo Lei, Li Bing-Lin, Xu Zhen-Hua, Ren Xian-Kun, Jiang Yan-Sen, Cheng Liang, Zhang Chun-Yan.Performance of polycrystal silicon color solar cells. Acta Physica Sinica, 2013, 62(16): 168802.doi:10.7498/aps.62.168802 |
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Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng.Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure. Acta Physica Sinica, 2013, 62(19): 197203.doi:10.7498/aps.62.197203 |
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Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang.Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301.doi:10.7498/aps.62.197301 |
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Zheng Xue, Yu Xue-Gong, Yang De-Ren.Passivation property of -Si：H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801.doi:10.7498/aps.62.198801 |
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Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou.Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica, 2009, 58(10): 7211-7215.doi:10.7498/aps.58.7211 |
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Liu Gui-Li.Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica, 2008, 57(7): 4441-4445.doi:10.7498/aps.57.4441 |
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Zhang Guo-Ying, Zhang Hui, Liu Yan-Xia, Yang Li-Na.The electronic theory study of the influence of Pd on the passivation of Ti alloys. Acta Physica Sinica, 2008, 57(4): 2404-2408.doi:10.7498/aps.57.2404 |
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