[1] |
Lin Ming-Yue, Ju Bo, Li Yan, Chen Xue-Lian.Performance of 2-bromoterephthalic acid passivated all-inorganic perovskite cells. Acta Physica Sinica, 2021, 70(12): 128803.doi:10.7498/aps.70.20202005 |
[2] |
Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
[3] |
Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo.First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica, 2018, 67(16): 166401.doi:10.7498/aps.67.20180626 |
[4] |
Wu Yang, Chen Qi, Xu Rui-Ying, Ge Rui, Zhang Biao, Tao Xu, Tu Xue-Cou, Jia Xiao-Qing, Zhang La-Bao, Kang Lin, Wu Pei-Heng.Optical properties of niobium nitride nanowires. Acta Physica Sinica, 2018, 67(24): 248501.doi:10.7498/aps.67.20181646 |
[5] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
[6] |
Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong.Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica, 2015, 64(23): 238502.doi:10.7498/aps.64.238502 |
[7] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui.Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801.doi:10.7498/aps.63.037801 |
[8] |
Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang.Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301.doi:10.7498/aps.62.197301 |
[9] |
Zheng Xue, Yu Xue-Gong, Yang De-Ren.Passivation property of -Si:H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801.doi:10.7498/aps.62.198801 |
[10] |
Zhang Xiang, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Jie, Shen Ze-Nan.The passivation of Al2O3 and its applications in the crystalline silicon solar cell. Acta Physica Sinica, 2012, 61(18): 187303.doi:10.7498/aps.61.187303 |
[11] |
Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
[12] |
Huang Rui, Wang Dan-Qing, Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan.Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer. Acta Physica Sinica, 2010, 59(8): 5823-5827.doi:10.7498/aps.59.5823 |
[13] |
Huang Rui, Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan.Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica, 2009, 58(3): 2072-2076.doi:10.7498/aps.58.2072 |
[14] |
Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou.Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica, 2009, 58(10): 7211-7215.doi:10.7498/aps.58.7211 |
[15] |
Liu Gui-Li.Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica, 2008, 57(7): 4441-4445.doi:10.7498/aps.57.4441 |
[16] |
Zhang Guo-Ying, Zhang Hui, Liu Yan-Xia, Yang Li-Na.The electronic theory study of the influence of Pd on the passivation of Ti alloys. Acta Physica Sinica, 2008, 57(4): 2404-2408.doi:10.7498/aps.57.2404 |
[17] |
Zhang Chao, Sun Jiu-Xun, Tian Rong-Gang, Zou Shi-Yong.Analytic equations of state and thermo-physical properties for the α, β, and γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5969-5973.doi:10.7498/aps.56.5969 |
[18] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan.Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica, 2006, 55(11): 6080-6084.doi:10.7498/aps.55.6080 |
[19] |
Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin.Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(7): 3357-3362.doi:10.7498/aps.54.3357 |
[20] |
WANG LEI, TANG JING-CHANG, WANG XUE-SEN.SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica, 2001, 50(3): 517-522.doi:10.7498/aps.50.517 |