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Wu Yang, Chen Qi, Xu Rui-Ying, Ge Rui, Zhang Biao, Tao Xu, Tu Xue-Cou, Jia Xiao-Qing, Zhang La-Bao, Kang Lin, Wu Pei-Heng.Optical properties of niobium nitride nanowires. Acta Physica Sinica, 2018, 67(24): 248501.doi:10.7498/aps.67.20181646 |
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Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie.Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica, 2016, 65(10): 104202.doi:10.7498/aps.65.104202 |
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Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong.Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica, 2015, 64(23): 238502.doi:10.7498/aps.64.238502 |
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Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui.Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801.doi:10.7498/aps.63.037801 |
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Jia He-Shun, Luo Lei, Li Bing-Lin, Xu Zhen-Hua, Ren Xian-Kun, Jiang Yan-Sen, Cheng Liang, Zhang Chun-Yan.Performance of polycrystal silicon color solar cells. Acta Physica Sinica, 2013, 62(16): 168802.doi:10.7498/aps.62.168802 |
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Huang Rui, Wang Dan-Qing, Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan.Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer. Acta Physica Sinica, 2010, 59(8): 5823-5827.doi:10.7498/aps.59.5823 |
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Yan Min-Yi, Wang Dan-Qing, Ma Zhong-Yuan, Yao Yao, Liu Guang-Yuan, Li Wei, Huang Xin-Fan, Chen Kun-Ji, Xu Jun, Xu Ling.Light intensity distribution in laser interference crystallization and the fabrication of two-dimensional periodic nanocrystalline silicon array. Acta Physica Sinica, 2010, 59(5): 3205-3209.doi:10.7498/aps.59.3205 |
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Wang Jun-Zhuan, Shi Zhuo-Qiong, Lou Hao-Nan, Zhang Xin-Luan, Zuo Ze-Wen, Pu Lin, Ma En, Zhang Rong, Zheng You-Liao, Lu Fang, Shi Yi.Influence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al2O3 multilayer. Acta Physica Sinica, 2009, 58(6): 4243-4248.doi:10.7498/aps.58.4243 |
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Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji.Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica, 2009, 58(11): 7878-7883.doi:10.7498/aps.58.7878 |
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Zhou Jiang, Wei De-Yuan, Xu Jun, Li Wei, Song Feng-Qi, Wan Jian-Guo, Xu Ling, Ma Zhong-Yuan.Electron field emission of nanocrystalline Si prepared by laser crystallization. Acta Physica Sinica, 2008, 57(6): 3674-3678.doi:10.7498/aps.57.3674 |
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Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji.Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica, 2008, 57(7): 4482-4486.doi:10.7498/aps.57.4482 |
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Yao Yao, Fang Zhong-Hui, Zhou Jiang, Li Wei, Ma Zhong-Yuan, Xu Jun, Huang Xin-Fan, Chen Kun-Ji, Yasuyuki Miyamoto, Shunri Oda.One-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization. Acta Physica Sinica, 2008, 57(8): 4960-4965.doi:10.7498/aps.57.4960 |
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Xu Ying, Diao Hong-Wei, Zhang Shi-Bin, Li Xu-Dong, Zeng Xiang-Bo, Wang Wen-Jing, Liao Xian-Bo.Deposition of p-type nc-SiC：H thin films with subtle carbon incorporation for applications in p-i-n solar cells. Acta Physica Sinica, 2007, 56(5): 2915-2919.doi:10.7498/aps.56.2915 |
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Zhang Chao, Sun Jiu-Xun, Tian Rong-Gang, Zou Shi-Yong.Analytic equations of state and thermo-physical properties for the α, β, and γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5969-5973.doi:10.7498/aps.56.5969 |
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Liu Yan-Song, Chen Kai, Qiao Feng, Huang Xin-Fan, Han Pei-Gao, Qian Bo, Ma Zhong-Yuan, Li Wei, Xu Jun, Chen Kun-Ji.The growth model and experimental validation of size-controlled nanocrystalline silicon. Acta Physica Sinica, 2006, 55(10): 5403-5408.doi:10.7498/aps.55.5403 |
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Zou He-Cheng, Qiao Feng, Wu Liang-Cai, Huang Xin-Fan, Li Xin, Han Pei-Gao, Ma Zhong-Yuan, Li Wei, Chen Kun-Ji.Two-dimensional patterned nc-Si arrays prepared by the method of laser interference crystallization. Acta Physica Sinica, 2005, 54(8): 3646-3650.doi:10.7498/aps.54.3646 |
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Li Xin, Wang Xiao－Wei, Li Xue－Fei, Qiao Feng, Mei Jia－Xin, Li Wei, Xu Jun, Huang Xin－Fan, Chen Kun－Ji.The formation of highdensity uniform silicon nanocrystalson insulator substrate and their surface morphology*. Acta Physica Sinica, 2004, 53(12): 4293-4298.doi:10.7498/aps.53.4293 |
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Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
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YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(12): 2487-2491.doi:10.7498/aps.50.2487 |
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MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
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