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Zhou Xu, Wang Chuan, Hu Rong-Hao, Tao Zhi-Hao, Deng Xiao-Liang, Liang Yi-Han, Li Xiao-Ya, Lü Meng, Zhu Wen-Jun.Fast computation approach of electron-impact ionization and excitation cross-sections for atoms and ions with medium- and high-Zelements. Acta Physica Sinica, 2024, 73(10): 103104.doi:10.7498/aps.73.20240213 |
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Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng.Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica, 2019, 68(5): 057302.doi:10.7498/aps.68.20182088 |
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Wang Xiang, Chen Lei-Lei, Cao Yan-Rong, Yang Qun-Si, Zhu Pei-Min, Yang Guo-Feng, Wang Fu-Xue, Yan Da-Wei, Gu Xiao-Feng.Physical model of conductive dislocations in GaN Schottky diodes. Acta Physica Sinica, 2018, 67(17): 177202.doi:10.7498/aps.67.20180762 |
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Chen Zhan-Bin, Ma Kun.Influence of eikonal-initial-state on ionization of atom by proton. Acta Physica Sinica, 2018, 67(11): 113401.doi:10.7498/aps.67.20172465 |
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming.Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2017, 66(7): 076101.doi:10.7498/aps.66.076101 |
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He Yu-Juan, Zhang Xiao-Wen, Liu Yuan.Total dose dependence of hot carrier injection effect in the n-channel metal oxide semiconductor devices. Acta Physica Sinica, 2016, 65(24): 246101.doi:10.7498/aps.65.246101 |
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Tang Du, He Chao-Hui, Zang Hang, Li Yong-Hong, Xiong Cen, Zhang Jin-Xin, Zhang Peng, Tan Peng-Kang.Multi-scale simulations of single particle displacement damage in silicon. Acta Physica Sinica, 2016, 65(8): 084209.doi:10.7498/aps.65.084209 |
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Zhao Wu-Duo, Wang Wei-Guo, Li Hai-Yang.Numerical simulation and experimental investigation of the production of multiply charged ions by the ionization of benzene cluster with a moderate intensity laser. Acta Physica Sinica, 2014, 63(10): 103602.doi:10.7498/aps.63.103602 |
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Li Wei-Qin, Liu Ding, Zhang Hai-Bo.Leakage current characteristics of the insulating sample under high-energy electron irradiation. Acta Physica Sinica, 2014, 63(22): 227303.doi:10.7498/aps.63.227303 |
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Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi.Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing. Acta Physica Sinica, 2013, 62(17): 176106.doi:10.7498/aps.62.176106 |
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Liu Meng, Su Lu-Ning, Zheng Yi, Li Yu-Tong, Wang Wei-Min, Sheng Zheng-Ming, Chen Li-Ming, Ma Jing-Long, Lu Xin, Wang Zhao-Hua, Wei Zhi-Yi, Hu Bi-Tao, Zhang Jie.Origin of energetic carbon ions with different charge states in ultrashort laser-thin foil interactions. Acta Physica Sinica, 2013, 62(16): 165201.doi:10.7498/aps.62.165201 |
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Ding Ding, He Bin, Shi Xian, Jian Guo.The differential cross sections and mechanisms of ionization and in the collisions of He2++H(1s) with strong magnetic fields. Acta Physica Sinica, 2013, 62(3): 033401.doi:10.7498/aps.62.033401 |
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Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min.Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's. Acta Physica Sinica, 2013, 62(3): 036105.doi:10.7498/aps.62.036105 |
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Chen Hai-Feng, Guo Li-Xin.Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's. Acta Physica Sinica, 2012, 61(2): 028501.doi:10.7498/aps.61.028501 |
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Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min.Gate length dependence of SOI NMOS device response to total dose irradiation. Acta Physica Sinica, 2012, 61(24): 240703.doi:10.7498/aps.61.240703 |
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103.doi:10.7498/aps.60.116103 |
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Guo Bao-Zeng, Zhang Suo-Liang, Liu Xin.Electron transport property in wurtzite GaN at high electric field with Monte Carlo simulation. Acta Physica Sinica, 2011, 60(6): 068701.doi:10.7498/aps.60.068701 |
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Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng.First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Physica Sinica, 2010, 59(8): 5661-5666.doi:10.7498/aps.59.5661 |
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Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru.The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profiles. Acta Physica Sinica, 2010, 59(3): 1970-1976.doi:10.7498/aps.59.1970 |
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Wang Xiao-Feng, Jia Tian-Qing, Xu Zhi-Zhan.Photon absorption of conduction band electronsand impact ionization under irradiation of few-cycle ultrashort laser pulses. Acta Physica Sinica, 2005, 54(7): 3451-3456.doi:10.7498/aps.54.3451 |
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