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Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan.Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica, 2023, 72(14): 146101.doi:10.7498/aps.72.20230161 |
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Liu Ye, Guo Hong-Xia, Ju An-An, Zhang Feng-Qi, Pan Xiao-Yu, Zhang Hong, Gu Zhao-Qiao, Liu Yi-Tian, Feng Ya-Hui.Data inversion and erroneous annealing of floating gate cell under proton radiation. Acta Physica Sinica, 2022, 71(11): 118501.doi:10.7498/aps.71.20212405 |
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Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li.Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica, 2020, 69(9): 098502.doi:10.7498/aps.69.20200123 |
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.Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories. Acta Physica Sinica, 2020, (): 006100.doi:10.7498/aps.69.20191796 |
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Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua.Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica, 2020, 69(13): 136103.doi:10.7498/aps.69.20201796 |
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Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong.Experimental study on neutron single event effects of commercial SRAMs based on CSNS. Acta Physica Sinica, 2020, 69(16): 162901.doi:10.7498/aps.69.20200265 |
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Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas.Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica, 2020, 69(1): 018501.doi:10.7498/aps.69.20190878 |
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Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei.Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101.doi:10.7498/aps.69.20191209 |
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Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei.Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica, 2017, 66(24): 246102.doi:10.7498/aps.66.246102 |
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Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan.Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102.doi:10.7498/aps.65.076102 |
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Luo Yin-Hong, Guo Xiao-Qiang, Chen Wei, Guo Gang, Fan Hui.Energy and angular dependence of single event upsets in ESA SEU Monitor. Acta Physica Sinica, 2016, 65(20): 206103.doi:10.7498/aps.65.206103 |
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Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia.Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica, 2016, 65(6): 068501.doi:10.7498/aps.65.068501 |
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Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang.Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101.doi:10.7498/aps.63.086101 |
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Chen Rui, Yu Yong-Tao, Shangguan Shi-Peng, Feng Guo-Qiang, Han Jian-Wei.Mechanism of multiple bit upsets induced by localized latch-up effect in 90 nm complementary metal semiconductor static random-access memory. Acta Physica Sinica, 2014, 63(12): 128501.doi:10.7498/aps.63.128501 |
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Wang Xiao-Han, Guo Hong-Xia, Lei Zhi-Feng, Guo Gang, Zhang Ke-Ying, Gao Li-Juan, Zhang Zhan-Gang.Calculation of single event upset based on Monte Carlo and device simulations. Acta Physica Sinica, 2014, 63(19): 196102.doi:10.7498/aps.63.196102 |
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Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
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Zheng Qi-Wen, Yu Xue-Feng, Cui Jiang-Wei, Guo Qi, Ren Di-Yuan, Cong Zhong-Chao.Research on SRAM functional failure mode induced by total ionizing dose irradiation. Acta Physica Sinica, 2013, 62(11): 116101.doi:10.7498/aps.62.116101 |
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
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Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming.Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656.doi:10.7498/aps.58.8651 |
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Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei.The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570.doi:10.7498/aps.53.566 |
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