| [1] |
Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei.Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101.doi:10.7498/aps.69.20191209 |
| [2] |
.Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories. Acta Physica Sinica, 2020, (): 006100.doi:10.7498/aps.69.20191796 |
| [3] |
Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua.Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica, 2020, 69(13): 136103.doi:10.7498/aps.69.20201796 |
| [4] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas.Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica, 2020, 69(1): 018501.doi:10.7498/aps.69.20190878 |
| [5] |
Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao.Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell. Acta Physica Sinica, 2019, 68(16): 168501.doi:10.7498/aps.68.20190405 |
| [6] |
Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Guo Wei-Xin, Ouyang Xiao-Ping, Wei Jia-Nan, Luo Yin-Hong, Zhong Xiang-Li, Li Bo, Qin Li.Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton. Acta Physica Sinica, 2018, 67(23): 237803.doi:10.7498/aps.67.20181225 |
| [7] |
Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia.Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica, 2016, 65(6): 068501.doi:10.7498/aps.65.068501 |
| [8] |
Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan.Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica, 2016, 65(7): 076102.doi:10.7498/aps.65.076102 |
| [9] |
Jiang Xian-Wei, Lu Shi-Bin, Dai Guang-Zhen, Wang Jia-Yu, Jin Bo, Chen Jun-Ning.Research of data retention for charge trapping memory by first-principles. Acta Physica Sinica, 2015, 64(21): 213102.doi:10.7498/aps.64.213102 |
| [10] |
Zhao Wen, Guo Xiao-Qiang, Chen Wei, Qiu Meng-Tong, Luo Yin-Hong, Wang Zhong-Ming, Guo Hong-Xia.Effects of nuclear reactions between protons and metal interconnect overlayers on single event effects of micro/nano scaled static random access memory. Acta Physica Sinica, 2015, 64(17): 178501.doi:10.7498/aps.64.178501 |
| [11] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Guo Xiao-Qiang, Zhao Wen, Ding Li-Li, Wang Yuan-Ming.Angular dependence of proton single event multiple-cell upsets in nanometer SRAM. Acta Physica Sinica, 2015, 64(21): 216103.doi:10.7498/aps.64.216103 |
| [12] |
Chen Rui, Yu Yong-Tao, Shangguan Shi-Peng, Feng Guo-Qiang, Han Jian-Wei.Mechanism of multiple bit upsets induced by localized latch-up effect in 90 nm complementary metal semiconductor static random-access memory. Acta Physica Sinica, 2014, 63(12): 128501.doi:10.7498/aps.63.128501 |
| [13] |
Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
| [14] |
Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang.Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101.doi:10.7498/aps.63.086101 |
| [15] |
Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu.Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica, 2013, 62(18): 188502.doi:10.7498/aps.62.188502 |
| [16] |
Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
| [17] |
Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming.Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656.doi:10.7498/aps.58.8651 |
| [18] |
Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming.Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory. Acta Physica Sinica, 2006, 55(8): 4347-4352.doi:10.7498/aps.55.4347 |
| [19] |
Li Hua.Monte Carlo simulation of the SRAM single event upset. Acta Physica Sinica, 2006, 55(7): 3540-3545.doi:10.7498/aps.55.3540 |
| [20] |
Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei.The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570.doi:10.7498/aps.53.566 |
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