Hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) thin films have been prepared by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) using a mixture of SiH4 and GeH4 as the reactive gases. Effects of electrode separation on the structural properties of μc-Si1-xGex:H thin films have been investigated. Results show that reduction of the electrode separation can increase the Ge content in the films. Moreover, μc-Si1-xGex:H thin film deposited at a lower electrode separation of 7 mm possesses not only a stronger (220) orientation and a larger grain size, but also a lower microstructural factor. Then, the decomposition characteristics of the reactive gases are analyzed according to the variation of the structural properties of the μc-Si1-xGex:H thin films. It is found that the increase of the Ge content is due to the decrease of the SiH4 decomposition rate in the plasma. While the better film quality obtained at the lower electrode separation is attributed to the enhancement of the diffusibility of the Ge precursors caused by improving the proportion of GeH3 radicals