[1] |
Guo Hui-Meng, Liang Yan, Dong Yu-Jiao, Wang Guang-Yi.Simplification of Chua corsage memristor and hardware implementation of its neuron circuit. Acta Physica Sinica, 2023, 72(7): 070501.doi:10.7498/aps.72.20222013 |
[2] |
Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui.Memristive brain-like computing. Acta Physica Sinica, 2022, 71(14): 140501.doi:10.7498/aps.71.20220666 |
[3] |
He Chao-Tao, Lu Yu, Li Xiu-Lin, Chen Peng.Facilitation of compliance current for resistive switching and stability of Ta/BaTiO3/Al2O3/ITO. Acta Physica Sinica, 2022, 71(8): 086102.doi:10.7498/aps.71.20211999 |
[4] |
Hu Wei, Liao Jian-Bin, Du Yong-Qian.An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505.doi:10.7498/aps.70.20210116 |
[5] |
Zeng Fan-Ju, Tan Yong-Qian, Tang Xiao-Sheng, Zhang Xiao-Mei, Yin Hai-Feng.Progress of lead-free perovskite and its resistance switching performance. Acta Physica Sinica, 2021, 70(15): 157301.doi:10.7498/aps.70.20210065 |
[6] |
Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang.Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702.doi:10.7498/aps.69.20200617 |
[7] |
Xu Wei, Wang Yu-Qi, Li Yue-Feng, Gao Fei, Zhang Miao-Cheng, Lian Xiao-Juan, Wan Xiang, Xiao Jian, Tong Yi.Design of novel memristor-based neuromorphic circuit and its application in classical conditioning. Acta Physica Sinica, 2019, 68(23): 238501.doi:10.7498/aps.68.20191023 |
[8] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501.doi:10.7498/aps.68.20181577 |
[9] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502.doi:10.7498/aps.68.20190808 |
[10] |
Zhang Zhi-Chao, Wang Fang, Wu Shi-Jian, Li Yi, Mi Wei, Zhao Jin-Shi, Zhang Kai-Liang.Influneces of different oxygen partial pressures on switching properties of Ni/HfOx/TiN resistive switching devices. Acta Physica Sinica, 2018, 67(5): 057301.doi:10.7498/aps.67.20172194 |
[11] |
Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua.Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor. Acta Physica Sinica, 2018, 67(15): 157302.doi:10.7498/aps.67.20180425 |
[12] |
Wu Jie-Ning, Wang Li-Dan, Duan Shu-Kai.A memristor-based time-delay chaotic systems and pseudo-random sequence generator. Acta Physica Sinica, 2017, 66(3): 030502.doi:10.7498/aps.66.030502 |
[13] |
Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua.A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503.doi:10.7498/aps.64.240503 |
[14] |
Dong Zhe-Kang, Duan Shu-Kai, Hu Xiao-Fang, Wang Li-Dan.Two types of nanoscale nonlinear memristor models and their series-parallel circuits. Acta Physica Sinica, 2014, 63(12): 128502.doi:10.7498/aps.63.128502 |
[15] |
Tian Xiao-Bo, Xu Hui, Li Qing-Jiang.Influence of the cross section area on the conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(4): 048401.doi:10.7498/aps.63.048401 |
[16] |
Li Zhi-Jun, Zeng Yi-Cheng, Li Zhi-Bin.Memristive chaotic circuit based on modified SC-CNNs. Acta Physica Sinica, 2014, 63(1): 010502.doi:10.7498/aps.63.010502 |
[17] |
Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi.Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure. Acta Physica Sinica, 2014, 63(6): 067202.doi:10.7498/aps.63.067202 |
[18] |
Xu Bi-Rong.A simplest parallel chaotic system of memristor. Acta Physica Sinica, 2013, 62(19): 190506.doi:10.7498/aps.62.190506 |
[19] |
Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Liu Kai.Micro-structural and resistive switching properties of vanadium oxide thin films. Acta Physica Sinica, 2013, 62(4): 047201.doi:10.7498/aps.62.047201 |
[20] |
Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei.Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306.doi:10.7498/aps.61.217306 |