[1] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
[2] |
Jiang Fu-Chun, Liu Rui-You, Peng Dong-Sheng, Liu Wen, Chai Guang-Yue, Li Bai-Kui, Wu Hong-Lei.Steady-state thermal resistance measurement of light-emitting diodes based on spectroscopic method. Acta Physica Sinica, 2021, 70(9): 098501.doi:10.7498/aps.70.20201093 |
[3] |
Chen Jia-Mei, Su Hang, Li Wan, Zhang Li-Lai, Suo Xin-Lei, Qin Jing, Zhu Kun, Li Guo-Long.Research progress of enhancing perovskite light emitting diodes with light extraction. Acta Physica Sinica, 2020, 69(21): 218501.doi:10.7498/aps.69.20200755 |
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Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
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Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi.Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica, 2019, 68(15): 158504.doi:10.7498/aps.68.20190647 |
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Guo Chun-Sheng, Ding Yan, Jiang Bo-Yang, Liao Zhi-Heng, Su Ya, Feng Shi-Wei.High-efficiency on-line measurement of junction temperature based on bipolar transistors in accelerated experiment. Acta Physica Sinica, 2017, 66(22): 224703.doi:10.7498/aps.66.224703 |
[7] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen.Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica, 2015, 64(5): 050701.doi:10.7498/aps.64.050701 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun.Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica, 2014, 63(6): 068103.doi:10.7498/aps.63.068103 |
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing.Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807.doi:10.7498/aps.61.127807 |
[11] |
Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
[12] |
Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu.Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087206.doi:10.7498/aps.60.087206 |
[13] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
[14] |
Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin.Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001.doi:10.7498/aps.59.4996 |
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Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei.Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica, 2009, 58(5): 3421-3426.doi:10.7498/aps.58.3421 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
[17] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
[19] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
[20] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |