[1] |
Xiong Jia-Cheng, Huang Zhe-Qun, Zhang Heng, Wang Qi-Xiang, Cui Ke-Hang.Spectral regulation in thermophotovoltaic devices. Acta Physica Sinica, 2024, 73(14): 144402.doi:10.7498/aps.73.20240629 |
[2] |
Wang Qi-Yu, Wang Shuo, Zhou Ge, Zhang Jie-Nan, Zheng Jie-Yun, Yu Xi-Qian, Li Hong.Progress on the failure analysis of lithium battery. Acta Physica Sinica, 2018, 67(12): 128501.doi:10.7498/aps.67.20180757 |
[3] |
Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang.Failure analysis of GaN-based Light-emitting diode with hole vertical structure. Acta Physica Sinica, 2017, 66(4): 048501.doi:10.7498/aps.66.048501 |
[4] |
Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
[5] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302.doi:10.7498/aps.61.227302 |
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Lin Xiao-Ling, Xiao Qing-Zhong, En Yun-Fei, Yao Ruo-He.Failure mechanism of FC-PBGA devices under external stress. Acta Physica Sinica, 2012, 61(12): 128502.doi:10.7498/aps.61.128502 |
[7] |
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
[8] |
You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
[9] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009.doi:10.7498/aps.59.5002 |
[10] |
Liu Pei-Sheng.Analyses of buckling failure mode for porous materials under compression. Acta Physica Sinica, 2010, 59(12): 8801-8806.doi:10.7498/aps.59.8801 |
[11] |
Wang Zu-Jun, Tang Ben-Qi, Xiao Zhi-Gang, Liu Min-Bo, Huang Shao-Yan, Zhang Yong.Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation. Acta Physica Sinica, 2010, 59(6): 4136-4142.doi:10.7498/aps.59.4136 |
[12] |
Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua.Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica, 2009, 58(1): 511-517.doi:10.7498/aps.58.511 |
[13] |
Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing.Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica, 2009, 58(2): 860-864.doi:10.7498/aps.58.860 |
[14] |
Liu Yu-An, Du Lei, Bao Jun-Lin.Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2008, 57(4): 2468-2475.doi:10.7498/aps.57.2468 |
[15] |
Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju.Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’s. Acta Physica Sinica, 2007, 56(3): 1662-1667.doi:10.7498/aps.56.1662 |
[16] |
Li Zhong-He, Liu Hong-Xia, Hao Yue.Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica, 2006, 55(2): 820-824.doi:10.7498/aps.55.820 |
[17] |
Liu Hong Xia, Zheng Xue Feng, Hao Yue.Degradation and physical mechanism of NBT in deep submicron PMOSFET's. Acta Physica Sinica, 2005, 54(3): 1373-1377.doi:10.7498/aps.54.1373 |
[18] |
Song Guo-Feng, Gan Qiao-Qiang, Qu Xin, Fang Pei-Yuan, Gao Jian-Xia, Cao Qing, Xu Jun, Kang Xiang-Ning, Xu Yun, Zhong Yuan, Yang Guo-Hua, Chen Liang-Hui.Fabrication process and power and lifetime characteristics of very-small-aperture laser. Acta Physica Sinica, 2005, 54(12): 5609-5613.doi:10.7498/aps.54.5609 |
[19] |
REN HONG-XIA, HAO YUE.STUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET. Acta Physica Sinica, 2000, 49(9): 1683-1688.doi:10.7498/aps.49.1683 |
[20] |
LIU JIA-LU, ZHANG TING-QING, LI JIAN-JUN, ZHAO YUAN-FU.SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING. Acta Physica Sinica, 1997, 46(8): 1580-1584.doi:10.7498/aps.46.1580 |