[1] |
Ye Jian-Feng, Qing Ming-Zhe, Xiao Qing-Quan, Wang Ao-Shuang, He An-Na, Xie Quan.First-principles study of electronic structure , magnetic and optical properties of Ti, V, Co and Ni doped two-dimensional CrSi2materials. Acta Physica Sinica, 2021, 70(22): 227301.doi:10.7498/aps.70.20211023 |
[2] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
[3] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[4] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[5] |
Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong.Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103.doi:10.7498/aps.62.017103 |
[6] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun.Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303.doi:10.7498/aps.61.227303 |
[7] |
Wu Hai-Ping, Chen Dong-Guo, Huang De-Cai, Deng Kai-Ming.Electronic and magnetic properties of SrCoO3:the first principles study. Acta Physica Sinica, 2012, 61(3): 037101.doi:10.7498/aps.61.037101 |
[8] |
Tan Xing-Yi, Chen Chang-Le, Jin Ke-Xin, Gao Yan-Jun.Electronic structure and magnetic properties in C-doped BaTiO3: A first-principles calculations. Acta Physica Sinica, 2012, 61(24): 247102.doi:10.7498/aps.61.247102 |
[9] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
[10] |
Wang Jiang-Long, Ge Zhi-Qi, Li Hui-Ling, Liu Hong-Fei, Yu Wei.Electronic structure and magnetic propertiesof post-perovskite CaRhO3. Acta Physica Sinica, 2011, 60(4): 047107.doi:10.7498/aps.60.047107 |
[11] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
[12] |
Tan Xing-Yi, Chen Chang-Le, Jin Ke-Xin, Chen Peng.Ferromagnetism properties in nitrogen-doped titanate: A first principles calculations. Acta Physica Sinica, 2011, 60(12): 127102.doi:10.7498/aps.60.127102 |
[13] |
Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
[14] |
Xing Hai-Ying, Fan Guang-Han, Zhou Tian-Ming.Electronic and magnetic properties of p,n type dopant and Mn co-doped GaN. Acta Physica Sinica, 2009, 58(5): 3324-3330.doi:10.7498/aps.58.3324 |
[15] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
[16] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
[17] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626.doi:10.7498/aps.56.1621 |
[18] |
Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
[19] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
[20] |
Hao Jing-An, Zheng Hao-Ping.Theoretical calculation of structures and properties of Ga6N6 cluster. Acta Physica Sinica, 2004, 53(4): 1044-1049.doi:10.7498/aps.53.1044 |