QIU Yiwu; LIANG Di; YIN Yanan; DONG Lei; WANG Tao; ZHOU Xinjie

doi:10.7498/aps.74.20250273

Abstract

In extreme radiation environments, such as space nuclear reactor systems, deep-space probe power modules, and launch vehicle propulsion systems, high-voltage and high-power devices demonstrate significant practical value. Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) possess advantages including high breakdown voltage, thermal stability, and low on-state resistance, enabling further improvements in aerospace power supply efficiency. Therefore, research on radiation effects and radiation-hardening techniques for SiC power MOSFETs has rapidly emerged as a critical focus in the industry. Firstly, this paper reviews the developmental evolution of SiC power MOSFETs, analyzes the necessity of transitioning from planar gate to trench-gate architectures, and provides future prospects for advanced SiC power MOSFET technologies. Secondly, it systematically compiles current research achievements in single event burnout (SEB) and single event gate rupture (SEGR) caused by heavy ion irradiation in SiC power MOSFETs. Finally, based on a mechanistic analysis of radiation-induced single event damage in SiC power MOSFETs, this study summarizes recent progress of radiation-hardening technologies, aiming to provide valuable ideas for understanding radiation induced failure mechanisms and enhancing the radiation tolerance of SiC power MOSFETs.

Keywords:

Authors and contacts

Corresponding author: ZHOU Xinjie, zhouxinjie2000@sina.com

Funds: Project supported by the Innovation Fund for the Center for Technology Innovation for Anti-Radiation Applications, China (Grant No. KFZC2021010202).

FullText HTML

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]

Cited By

DownLoad: Full-Size Img PowerPoint

器件设计	研究类型	LET/(MeV·cm²·mg^–1)	V_SEB/V	文献
[1200 V] VDMOSFET	Experiment	35.8	350	[6]
[1200 V] VDMOSFET	Experiment	7.7—49.1	580—700	[46]
[1200 V] VDMOSFET	Experiment	0.26—118	200—600	[49]
[1200 V] VDMOSFET	Experiment	70.2	800	[51]
[1200 V] VDMOSFET	Experiment	10—65	500—600	[52]
[1200 V] VDMOSFET	Experiment	81.3	400	[53]
[1200 V] VDMOSFET	Experiment	38.85	400	[54]

DownLoad: CSV

粒子	LET /(MeV·cm²·mg^–1)	Microdose /V	SELC /V	SEGR /V
Xe	62.5	40	70	120
Kr	32.4	70	120	400
Ni	20.4	90	120	—
Fe	14.53	430	450	500
Ca	13.5	520	530	550

DownLoad: CSV

器件设计	研究类型	LET/(MeV·cm²·mg^–1)	V_SEB/V	文献
[650 V] DTMOSFET	Simulation	151	70	[55]
[1200 V] DTMOSFET	Experiment	81.3	<504	[56]
[1512 V] DTMOSFET	Simulation	15.1	597	[58]
[900 V] TB-QVDMOSFET	Simulation	75.5	478	[64]
[1260 V] CoolSiC Trench MOSFET	Simulation	67.95	600	[65]
[1200 V] TGMOSFET	Experiment	75	500	[66]

DownLoad: CSV

器件类型	加固方法	加固机理	文献
NITG-MOSFET	多层缓冲层(MBLs)	MBLs可以降低N–漂移层与N+衬底界面处的峰值电场强度, 抑制二次击穿.	[83]
IM-DTMOSFET	p型源极缓冲层(P-SBL)和多缓冲层(MBLs)	P-SBL和MBLs可以缓解高能重离子撞击后瞬态脉冲引起的器件局部温度升高.	[93]
STG-MOSFET	源接触处P+屏蔽区和高K介质材料(HfO₂)	源接触处P+屏蔽区可抑制寄生BJT导通, 高K介电材料可降低栅氧化层的最大电场强度.	[98]
HEC-MOSFET	JFET中间区域P+ 柱和电流扩散层(CSL)	P+柱能去除JFET区域周围积累的多余空穴, CSL可以扩大能量耗散面积以及在高V_DS偏置下提供良好的夹断效果.	[99]
DGF-UMOSFET	接地和浮空p-埋层	p-埋层有效降低栅极氧化界面和衬底界面处的晶格最高温度.	[100]
DT-HJDUMOSFET	集成异质结二极管(HJD)	HJD结构能抑制寄生BJT的导通并且使产生的空穴电流可以有效地泄漏, 提高SEB性能.	[101]
SH-MOSFET	源极侧边多晶硅/ 碳化硅异质结	源极侧边poly-Si区域不仅充当空穴放电的通道, 降低氧化层下方积累的空穴浓度, 增强SEGR电阻, 还能有效降低寄生BJT的电流增益, 改善SEB性能.	[102]

DownLoad: CSV

map

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]

[1]	Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501. doi: 10.7498/aps.73.20240144
[2]	Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2024, 73(2): 026103. doi: 10.7498/aps.73.20231440
[3]	Cui Yi-Xin, Ma Ying-Qi, Shangguan Shi-Peng, Kang Xuan-Wu, Liu Peng-Cheng, Han Jian-Wei. Research on Single Event Burnout of GaN power devices with femtosecond pulsed laser. Acta Physica Sinica, 2022, 71(13): 136102. doi: 10.7498/aps.71.20212297
[4]	Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica, 2020, 69(9): 098502. doi: 10.7498/aps.69.20200123
[5]	Peng Chao^1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102. doi: 10.7498/aps.67.20181372
[6]	Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2017, 66(7): 076101. doi: 10.7498/aps.66.076101
[7]	Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101. doi: 10.7498/aps.64.086101
[8]	Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2015, 64(6): 067305. doi: 10.7498/aps.64.067305
[9]	Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304. doi: 10.7498/aps.63.237304
[10]	Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica, 2014, 63(14): 148502. doi: 10.7498/aps.63.148502
[11]	Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET. Acta Physica Sinica, 2013, 62(18): 188503. doi: 10.7498/aps.62.188503
[12]	Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu. Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica, 2013, 62(5): 058502. doi: 10.7498/aps.62.058502
[13]	Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803. doi: 10.7498/aps.61.107803
[14]	Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts. Acta Physica Sinica, 2012, 61(1): 016106. doi: 10.7498/aps.61.016106
[15]	Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305. doi: 10.7498/aps.60.027305
[16]	Feng Chao-Wen, Cai Li, Kang Qiang, Peng Wei-Dong, Bai Peng, Wang Jia-Fu. Realization of the discrete chaotic system based on SET-MOS circuits. Acta Physica Sinica, 2011, 60(11): 110502. doi: 10.7498/aps.60.110502
[17]	Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai. Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection. Acta Physica Sinica, 2011, 60(8): 086107. doi: 10.7498/aps.60.086107
[18]	Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702. doi: 10.7498/aps.60.068702
[19]	Zhang Zhi-Yong, Wang Tai-Hong. Multipeak negative-differential-resistance device by combining SET and MOSFET. Acta Physica Sinica, 2003, 52(7): 1766-1770. doi: 10.7498/aps.52.1766
[20]	REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248. doi: 10.7498/aps.49.1241

Catalog

Vol. 74, Issue 13 - 2025-07-05

Metrics

Abstract views: 1439
PDF Downloads: 98
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: ZHOU Xinjie, zhouxinjie2000@sina.com

FullText HTML

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Abstract

Authors and contacts

Corresponding author: ZHOU Xinjie, zhouxinjie2000@sina.com

FullText HTML

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About