ZHANG Wenjie; ZHANG Xiaojiao; HU Shunan; ZHAN Jie; GAO Enduo; WANG Qi; NIE Guozheng

doi:10.7498/aps.74.20250488

Abstract

Plasmon-induced transparency (PIT) is a class of electromagnetically induced transparency phenomenon that enhances the interaction between light and matter, thereby improving the performance of nano-optical devices. However, traditional PITs usually rely on near-field coupling between bright modes and dark modes. In order to break through the limitation of this mechanism, in this study we propose a dual-polarized graphene hypersurface structure, which consists of four groups of symmetric L-shaped graphene surrounding cross-shaped hollow graphene, forming a triple PIT through the synergistic effect between two single PITs. The accuracy of the results is verified by simulating the transmission spectra using the finite-difference time-domain, which is highly similar to that of the coupled-mode theory results. It is found that by modulating the Fermi energy levels and carrier mobility, this structure exhibits a group refractive index of up to 500 as a slow-light device, demonstrating excellent slow-light control capability. As a polarizing device, this structure has dual polarization characteristics and can generate a triple PIT window under both x and y polarized light incidence. In particular, the resonant frequency f₆ is not affected by the direction of polarization of the incident light. This good stability and resistance to interference in various polarized light conditions are particularly important for designing polarization devices. Meanwhile, we adjust the length parameter of graphene L₂ and find that the resonance frequency f₆ is still highly stable, showing a better tolerance to structural changes. Therefore, in this study, a multifunctional integrated device with slow light modulation and polarization selection in one device is designed, providing new theoretical guidance and research directions for synergistic effects based on polarization insensitivity.

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Corresponding author: ZHAN Jie, jiezhanwl@163.com ; GAO Enduo, 009004@csust.edu.cn ; NIE Guozheng, gzhnie@hnust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62175062, 62173135), the Natural Science Foundation of the Education Department of Hunan Province, China (Grant No. 23A0454), the Natural Science Foundation of Hunan Province, China (Grant No. 2025JJ50357), and the Open Fund for Hunan Provincial Key Laboratory of Intelligent Sensors and Novel Sensing Materials (Grant No. E22453).

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Reference /year	Modulation mode	Material structure	Group index	Polarization direction or sensitive
2020^[47]	Dual-frequency	Single-layer continuous patterned graphene	358	x-polarization
2021^[34]	Multiple-frequency	Single-layer discrete patterned graphene	321	Polarization-insensitive
2022^[48]	Multiple-frequency	Double-layer patterned graphene	<500	x-polarization
2023^[49]	Dual-frequency	Monolayer patterned black phosphorus	219	x-polarization
2023^[50]	Multiple-frequency	Double-layer patterned graphene	424	Polarization-insensitive
2024^[51]	Multiple-frequency	Single-layer silicon nanostrip array	320	x or y-polarization
This work	Multiple-frequency	Single-layer discrete patterned graphene	500	x or y-polarization-insensitive

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Vol. 74, Issue 15 - 2025-08-05

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Corresponding author: ZHAN Jie, jiezhanwl@163.com ; GAO Enduo, 009004@csust.edu.cn ; NIE Guozheng, gzhnie@hnust.edu.cn

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