| [1] |
Song Wen-Gang, Zhang Li-Jun, Zhang Jing, Wang Guan-Ying.Research on digital pulse processing techniques for silicon drift detector. Acta Physica Sinica, 2022, 71(1): 012903.doi:10.7498/aps.71.20211062 |
| [2] |
Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong.Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica, 2018, 67(12): 128101.doi:10.7498/aps.67.20180588 |
| [3] |
Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin.Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica, 2017, 66(12): 127302.doi:10.7498/aps.66.127302 |
| [4] |
Huo Da-Yun, Shi Zhen-Wu, Zhang Wei, Tang Shen-Li, Peng Chang-Si.Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector. Acta Physica Sinica, 2017, 66(6): 068501.doi:10.7498/aps.66.068501 |
| [5] |
Liao Kai-Sheng, Li Zhi-Feng, Li Liang, Wang Chao, Zhou Xiao-Hao, Dai Ning, Li Ning.Interfacial barrier effects in blocked impurity band infrared detectors. Acta Physica Sinica, 2015, 64(22): 227302.doi:10.7498/aps.64.227302 |
| [6] |
Meng Qing-Duan, Gui Lei, Zhang Xiao-Ling, Zhang Li-Wen, Geng Dong-Feng, Lü Yan-Qiu.Delamination study of InSb infrared focal plane arrays using a cohesive zone model. Acta Physica Sinica, 2014, 63(11): 118503.doi:10.7498/aps.63.118503 |
| [7] |
Zang Ge, Huang Yong-Qing, Luo Yang, Duan Xiao-Feng, Ren Xiao-Min.Design and analysis of high speed and high saturation uni-traveling-carrier photodetector. Acta Physica Sinica, 2014, 63(20): 208502.doi:10.7498/aps.63.208502 |
| [8] |
Zhang Zhi-Guo.Realization and experiment of vertical multijunction integrated photovoltaic Si X-ray detector. Acta Physica Sinica, 2014, 63(24): 248501.doi:10.7498/aps.63.248501 |
| [9] |
Huo Wen-Juan, Xie Hong-Yun, Liang Song, Zhang Wan-Rong, Jiang Zhi-Yun, Chen Xiang, Lu Dong.Uni-traveling-carrier double heterojunction phototransistor photodetector. Acta Physica Sinica, 2013, 62(22): 228501.doi:10.7498/aps.62.228501 |
| [10] |
Meng Qing-Duan, Yu Qian, Zhang Li-Wen, Lü Yan-Qiu.Mechanical parameters selection in InSb focal plane array detector normal direction. Acta Physica Sinica, 2012, 61(22): 226103.doi:10.7498/aps.61.226103 |
| [11] |
Zhang Ling-Zi, Zuo Yu-Hua, Cao Quan, Xue Chun-Lai, Cheng Bu-Wen, Zhang Wan-Chang, Cao Xue-Lei, Wang Qi-Ming.High-speed and high-power uni-traveling-carrier photodetector. Acta Physica Sinica, 2012, 61(13): 138501.doi:10.7498/aps.61.138501 |
| [12] |
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui.Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957.doi:10.7498/aps.58.7952 |
| [13] |
Zhou Mei, Zhao De-Gang.A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica, 2009, 58(10): 7255-7260.doi:10.7498/aps.58.7255 |
| [14] |
Yin Fei, Hu Wei-Da, Quan Zhi-Jue, Zhang Bo, Hu Xiao-Ning, Li Zhi-Feng, Chen Xiao-Shuang, Lu Wei.Determination of electron diffusion length in HgCdTe photodiodes using laser beam induced current. Acta Physica Sinica, 2009, 58(11): 7884-7890.doi:10.7498/aps.58.7884 |
| [15] |
Zhao Hong-Dong, Song Dian-You, Zhang Zhi-Feng, Sun Ji ng, Sun Mei, Wu Yi, Wen Xing-Rao.Influence of the potential in n-type DBR on threshold in vertical-cavity surface-emitting lasers. Acta Physica Sinica, 2004, 53(11): 3744-3747.doi:10.7498/aps.53.3744 |
| [16] |
WANG WEI-YUAN.MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica, 1979, 28(3): 341-349.doi:10.7498/aps.28.341 |
| [17] |
YUI SHOU-DUNG, WOO DAU-WEI, TON FU-DI, TAM HOA-YEN.MINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD. Acta Physica Sinica, 1966, 22(9): 976-981.doi:10.7498/aps.22.976 |
| [18] |
WANG SHOU-WU.THE MEASUREMENT OF THE LIFE TIME OF MINORITY CURRENT CARRIERS IN SEMICONDUCTORS BY OBSERVING THE PHOTO-CONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica, 1963, 19(3): 176-190.doi:10.7498/aps.19.176 |
| [19] |
ZHUANG WEI-HWA, PAN GUI-SHENG.MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD. Acta Physica Sinica, 1963, 19(3): 191-201.doi:10.7498/aps.19.191 |
| [20] |
WANG SHOU-WU.ON THE THEORY OF INJECTION OF MINORITY CARRIERS IN p-n ALLOY JUNCTIONS. Acta Physica Sinica, 1958, 14(1): 82-94.doi:10.7498/aps.14.82 |
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