| [1] |
Song Jian-Jun, Zhang Long-Qiang, Chen Lei, Zhou Liang, Sun Lei, Lan Jun-Feng, Xi Chu-Hao, Li Jia-Hao.A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology. Acta Physica Sinica, 2021, 70(10): 108401.doi:10.7498/aps.70.20201674 |
| [2] |
Ji Zeng-Chao, Chen Shi-Xiu, Gao Shen, Chen Jun, Tian Wei.Analysis on mechanism of radiating microwave from vacuum diode. Acta Physica Sinica, 2016, 65(14): 145202.doi:10.7498/aps.65.145202 |
| [3] |
Xiong Ling-Ling, Li Jian-Long, Lü Bai-Da.A novel method for simulating source-field distribution of diode laser. Acta Physica Sinica, 2009, 58(2): 975-979.doi:10.7498/aps.58.975 |
| [4] |
Zou Jian-Hua, Tao Hong, Wu Hong-Bin, Peng Jun-Biao.Improved performance of white polymer light emitting diodes. Acta Physica Sinica, 2009, 58(2): 1224-1228.doi:10.7498/aps.58.1224 |
| [5] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
| [6] |
Ma Li, Gao Yong.Semi-super junction SiGe high voltage fast and soft recovery switching diodes. Acta Physica Sinica, 2009, 58(1): 529-535.doi:10.7498/aps.58.529 |
| [7] |
Huang Wen-Bo, Zeng Wen-Jin, Wang Li, Peng Jun-Biao.Negative capacitance in polymer light-emitting diodes. Acta Physica Sinica, 2008, 57(9): 5983-5988.doi:10.7498/aps.57.5983 |
| [8] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
| [9] |
Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei.Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica, 2008, 57(2): 1141-1144.doi:10.7498/aps.57.1141 |
| [10] |
Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
| [11] |
Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
| [12] |
Huang Wen-Bo, Peng Jun-Biao.Carrier injection process of polymer light-emitting diodes. Acta Physica Sinica, 2007, 56(5): 2974-2978.doi:10.7498/aps.56.2974 |
| [13] |
Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
| [14] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
| [15] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
| [16] |
Sun Ke-Xu, Jiang Shao-En, Yi Rong-Qing, Cui Yan-Li, Ding Yong-Kun, Liu Shen-Ye.Research on time characteristics of soft X-ray diode. Acta Physica Sinica, 2006, 55(1): 68-75.doi:10.7498/aps.55.68 |
| [17] |
YI MING-GUANG.TRIGGERED OSCILLATION IN TUNNEL DIODE CIRCUITS WITH NON-LINEAR BIAS. Acta Physica Sinica, 1974, 23(5): 23-42.doi:10.7498/aps.23.23 |
| [18] |
.. Acta Physica Sinica, 1965, 21(9): 1697-1699.doi:10.7498/aps.21.1697 |
| [19] |
SHIUH GEN-TWEN, CHUO CHI-TSANG.THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DIFFUSED PARAMETRIC DIODE. Acta Physica Sinica, 1964, 20(4): 327-336.doi:10.7498/aps.20.327 |
| [20] |
SHIUH GEN-TWEN, CHUO CHI-TSANG.THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE. Acta Physica Sinica, 1964, 20(6): 540-549.doi:10.7498/aps.20.540 |
下载: