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Wang Peng, Wang Chao, Hu Li-Li, Zhang Li-Yan.Effect of SiO2 on the Stark splitting enlargement of Yb3+ in phosphate glass. Acta Physica Sinica, 2016, 65(5): 057801.doi:10.7498/aps.65.057801 |
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Kang Chao-Yang, Tang Jun, Li Li-Min, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang.Growth and characterization of graphene on SiO2/Si substrate. Acta Physica Sinica, 2012, 61(3): 037302.doi:10.7498/aps.61.037302 |
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Cao Bo, Bao Liang-Man, Li Gong-Ping, He Shan-Hu.Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems. Acta Physica Sinica, 2006, 55(12): 6550-6555.doi:10.7498/aps.55.6550 |
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Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia.Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739.doi:10.7498/aps.52.736 |
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SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA.ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408.doi:10.7498/aps.49.1404 |
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ZHU KAI-GUI, SHI JIAN-ZHONG, SHAO QING-YI.RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS. Acta Physica Sinica, 2000, 49(11): 2304-2306.doi:10.7498/aps.49.2304 |
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WANG WEI-HUA, BAI HAI-YANG, ZHANG YUN, CHEN HONG, WANG WEN-KUI.STUDY THE DIFFUSION MECHANISM OF Ni IN AMORPHOUS Si BY X-RAY DIFFRACTION. Acta Physica Sinica, 1993, 42(9): 1505-1509.doi:10.7498/aps.42.1505 |
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CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI.INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica, 1993, 42(8): 1324-1332.doi:10.7498/aps.42.1324 |
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LU JIANG, WU ZI-QIN.A CROSS-SECTIONED TEM STUDY OF Si-W/Si/SiO2/Si(100). Acta Physica Sinica, 1989, 38(6): 981-986.doi:10.7498/aps.38.981 |
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FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG.INTRODUCTION OF Ce INTO Si AND THE DIFFUSION COEFFICIENT OF Ce IN Si. Acta Physica Sinica, 1989, 38(9): 1534-1539.doi:10.7498/aps.38.1534 |
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QI MING, LUO JIN-SHENG.A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica, 1988, 37(10): 1600-1606.doi:10.7498/aps.37.1600 |
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HUANG BING-ZHONG, YU YU-ZHEN, HONG GUO-GUANG.THE ROUGHNESS OF THE Si-SiO2 INTERFACE. Acta Physica Sinica, 1987, 36(7): 829-837.doi:10.7498/aps.36.829 |
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LI SI-YUAN, ZHANG TONG-JUN, WANG IU-ZHEN, LI SHOU-SONG, YIN ZHI-PING.ANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN. Acta Physica Sinica, 1985, 34(6): 715-724.doi:10.7498/aps.34.715 |
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CHEN CHEN-CHIA, YOUNG CHENG-CHING, HUANG HENG-CHI.DIFFUSION OF PHOSPHORUS INTO SILICON THROUGH SILICON DIOXIDE FILM GROWN BY THERMAL OXIDATION. Acta Physica Sinica, 1964, 20(7): 662-669.doi:10.7498/aps.20.662 |