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Zhu Jie, Ji Meng, Ma Shuang.Influence of asymmetrical angle on crystal lattice strain analysis using Voigt-function method. Acta Physica Sinica, 2018, 67(3): 036102.doi:10.7498/aps.67.20172043 |
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Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang.Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growth. Acta Physica Sinica, 2018, 67(21): 218701.doi:10.7498/aps.67.20180305 |
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Wang Zhi-Guo, Zhang Peng, Chen Jia-Xuan, Bai Qing-Shun, Liang Ying-Chu.Effect of CC bond breakage on diamond tool wear in nanometric cutting of silicon. Acta Physica Sinica, 2015, 64(19): 198104.doi:10.7498/aps.64.198104 |
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Naranmandula.Solitary waves and their existence conditions in microstructured solids. Acta Physica Sinica, 2014, 63(19): 194301.doi:10.7498/aps.63.194301 |
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Ji Chuan, Xu Jin.Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica, 2012, 61(23): 236102.doi:10.7498/aps.61.236102 |
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Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao.Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica, 2012, 61(1): 016105.doi:10.7498/aps.61.016105 |
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Fang Xin, Shen Wen-Zhong.Oxygen and carbon behaviors in multi-crystalline silicon and their effect on solar cell conversion efficiency. Acta Physica Sinica, 2011, 60(8): 088801.doi:10.7498/aps.60.088801 |
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Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing.Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica, 2005, 54(10): 4863-4866.doi:10.7498/aps.54.4863 |
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Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin.Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica, 2004, 53(2): 550-554.doi:10.7498/aps.53.550 |
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LI MING, MAI ZHEN-HONG, CUI SHU-PAN.CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica, 1994, 43(1): 78-83.doi:10.7498/aps.43.78 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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SU FANG, C. LEE, P. C. TAYLOR.ELECTRON SPIN RESONANCE INVESTIGATION ON Si-H BONDS AND H-INDUCED DEFECTS IN SINGLE CRYSTALS OF SILICON. Acta Physica Sinica, 1988, 37(7): 1053-1058.doi:10.7498/aps.37.1053 |
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Duan Pei Gao Ping Tang Ji-you.A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica, 1987, 36(8): 986-991.doi:10.7498/aps.36.986 |
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CHU XI, MAI ZHEN-HONG, DAI DAO-YANG, CUI SHU-FAN, GE PEI-WEN.STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD. Acta Physica Sinica, 1987, 36(3): 408-410.doi:10.7498/aps.36.408 |
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MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN.STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica, 1984, 33(7): 921-926.doi:10.7498/aps.33.921 |
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YANG CHUAN-ZHENG, ZHU JIAN-SHENG.INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica, 1982, 31(3): 278-284.doi:10.7498/aps.31.278 |
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BA TU, HE YI-ZHEN.MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(7): 860-866.doi:10.7498/aps.29.860 |
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