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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song.Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901.doi:10.7498/aps.69.20200029 |
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Ji Chuan, Xu Jin.Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica, 2012, 61(23): 236102.doi:10.7498/aps.61.236102 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun.Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, 2007, 56(3): 1603-1607.doi:10.7498/aps.56.1603 |
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TANG XUE-FENG, GU MU, TONG HONG-YONG, LIANG LING, YAO MING-ZHEN, CHEN LING-YAN, LIAO JING-YING, SHEN BIN-FU, QU XIANG-DONG, YIN ZHI-WEN, XU WEI-XIN, WANG JING-C HENG.A STUDY ON La-DOPED PbWO4 SCINTILLATING CRYSTAL. Acta Physica Sinica, 2000, 49(10): 2007-2010.doi:10.7498/aps.49.2007 |
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ZHOU WEI-YA, XIE SI-SHEN, WANG GANG, QIAN SHENG-FA, MAO JIAN-MIN, DING XUE-ZHOU, LI NAN, FU CHUN-SHENG.MORPHOLOGY AND GROWTH DEFECTS OF C60 CRYSTALS. Acta Physica Sinica, 1996, 45(3): 470-479.doi:10.7498/aps.45.470 |
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Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris.. Acta Physica Sinica, 1995, 44(7): 1101-1107.doi:10.7498/aps.44.1101 |
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Xu Qiang, Wang Jian-Bao, Yuan Jian, Lu Fang, Sun Heng-Hui.. Acta Physica Sinica, 1995, 44(3): 432-438.doi:10.7498/aps.44.432 |
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YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG.STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING. Acta Physica Sinica, 1994, 43(7): 1137-1143.doi:10.7498/aps.43.1137 |
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LI MING, MAI ZHEN-HONG, CUI SHU-PAN.CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica, 1994, 43(1): 78-83.doi:10.7498/aps.43.78 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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Duan Pei Gao Ping Tang Ji-you.A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica, 1987, 36(8): 986-991.doi:10.7498/aps.36.986 |
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MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN.STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica, 1984, 33(7): 921-926.doi:10.7498/aps.33.921 |
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HE XIAN-CHANG.EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1984, 33(5): 694-695.doi:10.7498/aps.33.694 |
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GAO YU-ZUN.TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica, 1984, 33(6): 840-844.doi:10.7498/aps.33.840 |
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MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU.OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1983, 32(5): 685-688.doi:10.7498/aps.32.685 |
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YANG CHUAN-ZHENG, ZHU JIAN-SHENG.INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica, 1982, 31(3): 278-284.doi:10.7498/aps.31.278 |
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GUO CHANG-LIN, HUANG YUE-HONG, FAN SHI-JI.A X-RAY STUDY OF IMPERFECTION IN SYNTHETIC FLUOROPHLOGOPITE CRYSTAL. Acta Physica Sinica, 1980, 29(4): 461-468.doi:10.7498/aps.29.461 |
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JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING.MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica, 1980, 29(10): 1283-1292.doi:10.7498/aps.29.1283 |
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