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Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan.Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica, 2015, 64(17): 177802.doi:10.7498/aps.64.177802 |
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Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong.Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica, 2015, 64(7): 078103.doi:10.7498/aps.64.078103 |
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Zhang Bing-Po, Cai Chun-Feng, Cai Xi-Kun, Wu Hui-Zhen, Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE. Acta Physica Sinica, 2012, 61(4): 046802.doi:10.7498/aps.61.046802 |
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Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing.The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica, 2012, 61(13): 137303.doi:10.7498/aps.61.137303 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Li Ying-De.A theoretical study of electrical properties of molecular junction. Acta Physica Sinica, 2006, 55(6): 2997-3002.doi:10.7498/aps.55.2997 |
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Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing.Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica, 2005, 54(10): 4863-4866.doi:10.7498/aps.54.4863 |
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JING CHAO, JIN XIAO-FENG, DONG GUO-SHENG, GONG XIAO-YAN, YU LI-MING, ZHENG WEI-MIN.EXCHANGE BIASING IN MOLECULAR-BEAM-EPITAXY-GROWN Fe/Fe50Mn50 BILAYERS. Acta Physica Sinica, 2000, 49(10): 2022-2026.doi:10.7498/aps.49.2022 |
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YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
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GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(8): 1631-1635.doi:10.7498/aps.46.1631 |
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LU FANG, GONG DA-WEI, SUN HENG-HUI.A STUDY OF THE INTERFACIAL DEFECTS IN MOLECULAR BEAM EPITAXIAL SILICON. Acta Physica Sinica, 1994, 43(7): 1129-1136.doi:10.7498/aps.43.1129 |
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QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG.MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs. Acta Physica Sinica, 1993, 42(12): 1956-1962.doi:10.7498/aps.42.1956 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
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HUANG YI, ZHOU JUN-MING, JIA WEI-YI, CHENG WEN-QIN, WANG YAN-YUN.LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE. Acta Physica Sinica, 1987, 36(2): 165-171.doi:10.7498/aps.36.165 |
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