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Li Shi-Jia, Wang Zhen-Xing, Niu Yan, Wang Bin, Sang Sheng-Bo, Zhang Wen-Dong, Gao Yang, Ji Jian-Long.I-Vcharacteristics and voltage dependence of pH-sensitive organic electrochemical transistors. Acta Physica Sinica, 2022, 71(13): 138501.doi:10.7498/aps.71.20220241 |
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Zhou Mei, Li Chun-Yan, Zhao De-Gang.A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diode. Acta Physica Sinica, 2016, 65(19): 197302.doi:10.7498/aps.65.197302 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Ma Song-Shan, Zhu Jia, Xu Hui, Guo Rui.Base pairs composition, on-site energies of electrode and DNA-metal coupling effects on current-voltage characteristic of DNA molecule. Acta Physica Sinica, 2010, 59(10): 7458-7462.doi:10.7498/aps.59.7458 |
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Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang.Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica, 2008, 57(9): 5887-5892.doi:10.7498/aps.57.5887 |
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Yang Xue-Wen, Zheng Jia-Gui, Zhang Jing-Quan, Feng Liang-Huan, Cai Wei, Cai Ya-Ping, Li Wei, Li Bing, Lei Zhi, Wu Li-Li.Characteristics of CdTe solar cell device. Acta Physica Sinica, 2006, 55(5): 2504-2507.doi:10.7498/aps.55.2504 |
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Zheng Yi, Shen Jing-Qin, Chen Xue-Zhi, Wang Hong-Tao, Xu Zhu-An, Zhang Xuan-Jia.Modulation effect of transverse alternating and direct currents on I-V characteristics in blue bronze K0.3MoO3. Acta Physica Sinica, 2004, 53(4): 1182-1185.doi:10.7498/aps.53.1182 |
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Liu Yan-Xin, Wang Yong-Chang, Du Shao-Yi.The study of I-V characteristics of single-electron triple-barrier tunnel-junction. Acta Physica Sinica, 2004, 53(8): 2734-2740.doi:10.7498/aps.53.2734 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Xin Yu, Xu Sheng-Hua.Effect of C═C content on I-V characteristics of fluorinated amorphous carbon thin films. Acta Physica Sinica, 2004, 53(5): 1496-1500.doi:10.7498/aps.53.1496 |
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Liu Ming, Liu Hong, He Yu-Ｌiang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
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WANG JING-SONG, YE GAO-XIANG, XU YU-QING, ZHANG QI-RUI.THE I-V CHARACTERISTICS OF SILVER THIN FILM ON THE RANDOM FRACTAL SUBSTRATE. Acta Physica Sinica, 1994, 43(10): 1688-1692.doi:10.7498/aps.43.1688 |
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CHE GUANG-CAN, LIANG JING-KUI, JIN ZUO-WEN, ZHAO ZHONG-XIAN.A STUDY ON PHASE RELATIONS OF RAPIDLY QUENCHED ALLOYS IN Ag-Ge SYSTEMS. Acta Physica Sinica, 1985, 34(4): 476-483.doi:10.7498/aps.34.476 |
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CHEN XI-SEN, WANG ZU-LUN, GUAN WEI-YAN.THE SUPERCONDUCTING-NORMAL TRANSITIONS OF FAST QUENCHED SUPERSATURATED SOLID SOLUTION Al-lat% Ge ALLOY. Acta Physica Sinica, 1983, 32(2): 256-258.doi:10.7498/aps.32.256 |
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Chen Xi-chen, Guan Wei-yan, Yi Sun-sheng, Wang Zu-lun, Lin Ying.A STUDY ON THE SUPERCONDUCTIVITY OF FAST QUENCHED Al-Si-Ge ALLOY. Acta Physica Sinica, 1983, 32(4): 446-459.doi:10.7498/aps.32.446 |
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GUAN WEI-YAN, CHEN XI-SHEN, WANG ZU-LUN, YI SUN-SHENG, LIN YING.A STUDY OF THE SUPER-CONDUCTIVITY OF FAST QUENCHED Al-Si ALLOY. Acta Physica Sinica, 1982, 31(4): 485-502.doi:10.7498/aps.31.485 |
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CHEN XI-SEN, GUAN WEI-YAN, YI SUN-SHENG, WANG ZU-LUN, LIN YING.THE MICROSTRUCTURE AND SUPERCONDUCTING-NORMAL TRANSITIONS OF FAST QUENCHED Al-Si-Ge. Acta Physica Sinica, 1982, 31(2): 268-270.doi:10.7498/aps.31.268 |
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GUAN WEI-YAN, CHEN XI-SEN, WANG ZU-LUN, YI SUN-SHENG.NEGATIVE MAGNETORESISTIVITY OF RAPIDLY QUENCHED SUPERCONDUCTING ALLOY AI-11.3 at% Si. Acta Physica Sinica, 1981, 30(9): 1284-1286.doi:10.7498/aps.30.1284 |
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