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Chang Chao, Kou Jin-Zong, Xu Xiao-Zhi.Growth of two-dimensional single crystal materials controlled by atomic steps. Acta Physica Sinica, 2023, 72(20): 208101.doi:10.7498/aps.72.20230887 |
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Li Shi-Jia, Wang Zhen-Xing, Niu Yan, Wang Bin, Sang Sheng-Bo, Zhang Wen-Dong, Gao Yang, Ji Jian-Long.I-Vcharacteristics and voltage dependence of pH-sensitive organic electrochemical transistors. Acta Physica Sinica, 2022, 71(13): 138501.doi:10.7498/aps.71.20220241 |
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Zhou Mei, Li Chun-Yan, Zhao De-Gang.A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diode. Acta Physica Sinica, 2016, 65(19): 197302.doi:10.7498/aps.65.197302 |
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Wang Li-Shi, Xu Jian-Ping, Shi Shao-Bo, Zhang Xiao-Song, Ren Zhi-Rui, Ge Lin, Li Lan.Influence of ZnS modification on the I-V performance of ZnO nanorods：P3HT composite films. Acta Physica Sinica, 2013, 62(19): 196103.doi:10.7498/aps.62.196103 |
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Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
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Cao Lei, Liu Peng, Zhou Jian-Ping, Wang Ya-Juan, Su Li-Na, Liu Cheng.Dielectric properties and nonlinear current-voltage behavior of MgTiO3-doped CaCu3Ti4O12 ceramics. Acta Physica Sinica, 2011, 60(3): 037701.doi:10.7498/aps.60.037701 |
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Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He.S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica, 2010, 59(9): 6538-6544.doi:10.7498/aps.59.6538 |
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Deng Heng, Yang Chang-Ping, Huang Chang, Xu Ling-Fang.Magnetically correlated I-V nonlinearity and electrical transport property of the double-layered perovskite La1.8Ca1.2Mn2O7 compound. Acta Physica Sinica, 2010, 59(10): 7390-7395.doi:10.7498/aps.59.7390 |
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Ma Song-Shan, Zhu Jia, Xu Hui, Guo Rui.Base pairs composition, on-site energies of electrode and DNA-metal coupling effects on current-voltage characteristic of DNA molecule. Acta Physica Sinica, 2010, 59(10): 7458-7462.doi:10.7498/aps.59.7458 |
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Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang.Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica, 2008, 57(9): 5887-5892.doi:10.7498/aps.57.5887 |
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Yang Xue-Wen, Zheng Jia-Gui, Zhang Jing-Quan, Feng Liang-Huan, Cai Wei, Cai Ya-Ping, Li Wei, Li Bing, Lei Zhi, Wu Li-Li.Characteristics of CdTe solar cell device. Acta Physica Sinica, 2006, 55(5): 2504-2507.doi:10.7498/aps.55.2504 |
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Zheng Yi, Shen Jing-Qin, Chen Xue-Zhi, Wang Hong-Tao, Xu Zhu-An, Zhang Xuan-Jia.Modulation effect of transverse alternating and direct currents on I-V characteristics in blue bronze K0.3MoO3. Acta Physica Sinica, 2004, 53(4): 1182-1185.doi:10.7498/aps.53.1182 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Xin Yu, Xu Sheng-Hua.Effect of C═C content on I-V characteristics of fluorinated amorphous carbon thin films. Acta Physica Sinica, 2004, 53(5): 1496-1500.doi:10.7498/aps.53.1496 |
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Liu Yan-Xin, Wang Yong-Chang, Du Shao-Yi.The study of I-V characteristics of single-electron triple-barrier tunnel-junction. Acta Physica Sinica, 2004, 53(8): 2734-2740.doi:10.7498/aps.53.2734 |
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Liu Ming, Liu Hong, He Yu-Ｌiang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
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WANG JING-SONG, YE GAO-XIANG, XU YU-QING, ZHANG QI-RUI.THE I-V CHARACTERISTICS OF SILVER THIN FILM ON THE RANDOM FRACTAL SUBSTRATE. Acta Physica Sinica, 1994, 43(10): 1688-1692.doi:10.7498/aps.43.1688 |
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WANG QIANG-HUA, WANG WEI, YAO XI-XIAN.RETURNING EFFECT AND THE FIRST ZERO FIELD STEP IN AN ANNULAR JOSEPHSON JUNCTION. Acta Physica Sinica, 1992, 41(1): 115-122.doi:10.7498/aps.41.115 |
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XU KUN-MING, LU DAO-FANG, YAO XI-XIAN.ZERO FIELD STEPS IN AN ANNULAR SYMMETRIC JOSEPHSON JUNCTION. Acta Physica Sinica, 1992, 41(1): 97-105.doi:10.7498/aps.41.97 |
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QIAN MIN, PAN TAO, LIU ZHENG-RONG.THEORETIC ANALYSIS OF I-V CHARACTERISTICS IN JOSEPHSON JUNCTION. Acta Physica Sinica, 1987, 36(2): 149-156.doi:10.7498/aps.36.149 |
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ZHAO GUANG-LIN, ZHENG JIA-QI, WANG ZU-LUN, CHEN SY-SEN, GUAN WEI-YAN.THE I-V CHARACTERISTICS OF THE ROLLING-QUENCHED SUPERCONDUCTING Al-Si-Ge ALLOYS. Acta Physica Sinica, 1983, 32(8): 1079-1081.doi:10.7498/aps.32.1079 |
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