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Guo Hong-Yan, Xia Min, Yan Qing-Zhi, Guo Li-Ping, Chen Ji-Hong, Ge Chang-Chun.Microstructure of medium energy and high density helium ion implanted tungsten. Acta Physica Sinica, 2016, 65(7): 077803.doi:10.7498/aps.65.077803 |
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Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou.Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica, 2014, 63(23): 237103.doi:10.7498/aps.63.237103 |
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Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun.Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501.doi:10.7498/aps.63.047501 |
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Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen.Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica, 2014, 63(13): 136803.doi:10.7498/aps.63.136803 |
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Peng Shu-Ming, Shen Hua-Hai, Long Xing-Gui, Zhou Xiao-Song, Yang Li, Zu Xiao-Tao.The influence of deuteration and helium-implantation on the surface morphology and phase structure of scandium thick film. Acta Physica Sinica, 2012, 61(17): 176106.doi:10.7498/aps.61.176106 |
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Huang Yong-Xian, Lü Shi-Xiong, Tian Xiu-Bo, Yang Shi-Qin, Fu Ricky, Chu K Paul, Leng Jin-Song, Li Yao.Effect of physical properties of polymer on ion implantation. Acta Physica Sinica, 2012, 61(10): 105203.doi:10.7498/aps.61.105203 |
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Li Tian-Jing, Li Gong-Ping, Ma Jun-Ping, Gao Xing-Xin.Effect of Co+ implantation on structural and optical properties in single-crystal TiO2. Acta Physica Sinica, 2011, 60(11): 116102.doi:10.7498/aps.60.116102 |
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Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao.Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113.doi:10.7498/aps.58.7108 |
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Tang Nai-Yun, Ji Ya-Lin, Chen Xiao-Shuang, Lu Wei.Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots. Acta Physica Sinica, 2005, 54(6): 2904-2909.doi:10.7498/aps.54.2904 |
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Li Jun-Jie, Wu Han-Hua, Long Bei-Yu, Lü Xian-Yi, Hu Chao-Quan, Jin Zeng-Sun.The effect of nitrogen-implantation on the field-emission properties of CVD diamond films. Acta Physica Sinica, 2005, 54(3): 1447-1451.doi:10.7498/aps.54.1447 |
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Cao Tian-De.. Acta Physica Sinica, 2002, 51(5): 1118-1121.doi:10.7498/aps.51.1118 |
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LIU FENG-ZHEN, ZHU MEI-FANG, LIU TAO, LI BING-CHENG.THE TRANSITION FROM Eu3+TO Eu2+ IN SiO2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO-SPUTTERING. Acta Physica Sinica, 2001, 50(3): 532-535.doi:10.7498/aps.50.532 |
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TU XIAN-HUA, LI DAO-HUO.BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385.doi:10.7498/aps.49.1383 |
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YAO JIANG-HONG, XU JING-JUN, ZHANG GUANG-YIN, ZOU YUN-JUAN, CHEN GUANG-HUA, YANG RU, JIN YONG-FAN.EFFECT OF MEDIUM-ENERGY RADIATION ON C60 FILMS. Acta Physica Sinica, 1999, 48(7): 1269-1274.doi:10.7498/aps.48.1269 |
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YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
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LlU JIA-RUI, ZHANG JIAN-HUA, LI YI.THE EFFECT OF ANHARMONIC INTERACTIONS AMONG LATTICE ATOMS ON THE ION IMPLANTATION. Acta Physica Sinica, 1989, 38(9): 1400-1405.doi:10.7498/aps.38.1400 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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WANG GUANG-HOU.HYDROGEN DISTRIBUTION IN THE ION IMPLANTED SUPERCONDUCTOR PdCu AND ITS TRANSITION TEMPERATURE. Acta Physica Sinica, 1984, 33(10): 1434-1436.doi:10.7498/aps.33.1434 |
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XU YUN-HUI, ZHOU LI, YIN DAO-LE.THE EFFECT OF Nb ON SUPERCONDUCTING Tc OF C-15 V2 (HfZr). Acta Physica Sinica, 1982, 31(9): 1183-1190.doi:10.7498/aps.31.1183 |