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Deng Wen-Juan, Zhu Bin, Wang Zhuang-Fei, Peng Xin-Cun, Zou Ji-Jun.Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes. Acta Physica Sinica, 2022, 71(15): 157901.doi:10.7498/aps.71.20220244 |
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Zhang Xin-Yuan, Hu Yi-Hua, Shen Shi-Yang, Fang Jia-Jie, Wang Yi-Cheng, Liu Yi-Fan, Han Fei.Kilometer-level laser reflective tomography experiment and debris barycenter estimation. Acta Physica Sinica, 2022, 71(11): 114205.doi:10.7498/aps.71.20220205 |
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Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo.The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica, 2014, 63(12): 127302.doi:10.7498/aps.63.127302 |
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Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
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Feng Xian-Yang, Lu Yao, Jiang Lei, Zhang Guo-Lian, Zhang Chang-Wen, Wang Pei-Ji.Study of the optical properties of superlattices ZnO doped with indium. Acta Physica Sinica, 2012, 61(5): 057101.doi:10.7498/aps.61.057101 |
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Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
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Song Yu-Xin, Yu Zhong-Yuan, Liu Yu-Min.Influences of flux and interruption on InAs/GaAs quantum dot superlattice growth. Acta Physica Sinica, 2008, 57(4): 2399-2403.doi:10.7498/aps.57.2399 |
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Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen.Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field. Acta Physica Sinica, 2006, 55(10): 5023-5029.doi:10.7498/aps.55.5023 |
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AN ZHONG, LI ZHAN-JIE, YAO KAI-LUN.ENERGY SPECTRA AND LOCALIZED ELECTRON STATES OF SOLITON LATTICE IN Na-DOPED TRANS (CH)x. Acta Physica Sinica, 1994, 43(9): 1502-1506.doi:10.7498/aps.43.1502 |
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LI DAI-QING, GONG BAO-AN, WAN YA, ZHU PEI-RAN, ZHOU JUN-SI, XU TIAN-BING, MU SHAN-MING, ZHAO QING-TAI, WANG ZHONG-LIE.STUDIES OF LATTICE DAMAGE CAUSED BY 1MeV Si+ IMPLANTATION INTO Al0.3Ga0.7As/GaAs SUPERLATTICES AND GaAs AT ELEVATED SUBSTRATE TEMPERATURE. Acta Physica Sinica, 1994, 43(8): 1311-1317.doi:10.7498/aps.43.1311 |
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LI JIAN-HUA, MAI ZHEN-HONG, CUI SHU-FAN.X-RAY DOUBLE-CRYSTAL DIFFRACTION AND TOPOGRAPHY STUDY OF STRAIN RELAXED InGaAs/GaAs SUPERLATTICES. Acta Physica Sinica, 1993, 42(9): 1485-1490.doi:10.7498/aps.42.1485 |
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PAN SHI-HONG, WANG ZHONG-HE, HUANG SHUO, ZHANG CUN-ZHOU, ZHOU XIAO-CHUAN, XU GUI-CHANG, JIANG JIAN, CHEN ZHONG-GUI.PHOTOREFLECTANCE SPECTRA FROM SURFACES AND GaAs-GaAs INTERFACES OF DOPED MBE GaAs FILMS. Acta Physica Sinica, 1993, 42(11): 1879-1886.doi:10.7498/aps.42.1879 |
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HAN HE-XIANG, WANG ZHAO-PING, LI GUO-HUA, JIANG DE-SHENG, K. PLOOG.NEAR RESONANT RAMAN SCATTERING FROM GaAs/AlAs SUPERLATTICES. Acta Physica Sinica, 1992, 41(4): 661-667.doi:10.7498/aps.41.661 |
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PAN SHAO-HUA, CHEN ZHENG-HAO, FENG SI-MIN, CUI DA-FU, YANG GUO-ZHEN.STUDY OF INTERSUBBAND OPTICAL TRANSITIONS IN GaAs/AlxGa1-xAs SUPERLATTICES. Acta Physica Sinica, 1990, 39(12): 2011-2018.doi:10.7498/aps.39.2011 |
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