[1] |
Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong.Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica, 2011, 60(1): 016109.doi:10.7498/aps.60.016109 |
[2] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
[3] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
[4] |
Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
[5] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
[6] |
HU HAI-TIAN, LAI BING, YUAN ZE-LIANG, DING XUN-MIN, HOU XIAO-YUAN.NITRIDATION OF K/GaAs(100) SURFACES. Acta Physica Sinica, 1998, 47(6): 1041-1046.doi:10.7498/aps.47.1041 |
[7] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG.FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica, 1998, 47(8): 1346-1353.doi:10.7498/aps.47.1346 |
[8] |
WU YI-ZHENG, DING HAI-FENG, JING CHAO, WU DI, LIU GUO-LEI, DONG GUO-SHENG, JIN XIAO-FENG.MOLECULAR BEAM EPITAXIAL GROWTH AND STRUCTURE OF COBALT FILM ON GaAs(001) SURFACE. Acta Physica Sinica, 1998, 47(3): 461-466.doi:10.7498/aps.47.461 |
[9] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING.InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica, 1997, 46(5): 969-974.doi:10.7498/aps.46.969 |
[10] |
LING YONG, XUE QI-KUN, CHEN HAO-MING, T.SAKURAI.STUDY ON GROWTH OF C60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY. Acta Physica Sinica, 1997, 46(8): 1559-1566.doi:10.7498/aps.46.1559 |
[11] |
XU MIN, ZHU XING-GUO, ZHANG MING, DONG GUO-SHENG, JIN XIAO-FENG.AN XPS STUDY OF Mn THIN FILMS GROWN ON GaAs(001l) SURFACE. Acta Physica Sinica, 1996, 45(7): 1178-1184.doi:10.7498/aps.45.1178 |
[12] |
MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU.MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica, 1994, 43(7): 1118-1122.doi:10.7498/aps.43.1118 |
[13] |
QI MING, J. SHIRAKASHI, E. TOKUMITSU, S. NOZAKI, M. KONAGAI, K. TAKAHASHI, LUO JIN-SHENG.MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs. Acta Physica Sinica, 1993, 42(12): 1956-1962.doi:10.7498/aps.42.1956 |
[14] |
LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN.PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696.doi:10.7498/aps.41.689 |
[15] |
WANG JIE, Lü HONG-QIANG, LIU YONG, WANG XUN, YAO WEN-HUA, SHEN XIAO-LIANG.HETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY. Acta Physica Sinica, 1992, 41(11): 1856-1861.doi:10.7498/aps.41.1856 |
[16] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
[17] |
HU FU-YI, LI AI-ZHEN.RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica, 1991, 40(6): 962-968.doi:10.7498/aps.40.962 |
[18] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
[19] |
TANG YIN-SHENG, WANG BENG-SHEN, JIANG DE-SHENG, ZHUANG WEI-HUA, LIANG JI-BEN.PHOT OREFLECTANCE SPECTROSCOPY OF GaAs DOPING SUPERLATTICES. Acta Physica Sinica, 1988, 37(1): 157-161.doi:10.7498/aps.37.157 |
[20] |
XU HONG-DA, SHAO QUAN-YUAN, XIAO NAN.ANALYSIS OF METAL-GaAs CONTACT INTERFACES. Acta Physica Sinica, 1981, 30(9): 1249-1258.doi:10.7498/aps.30.1249 |