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Zhai Shi-Ming, Liao Huang-Sheng, Zhou Nai-Gen, Huang Hai-Bin, Zhou Lang.Atomic simulation of SiyHxstructure configuration in a-Si:H thin films. Acta Physica Sinica, 2020, 69(7): 076801.doi:10.7498/aps.69.20191275 |
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Zheng Xue, Yu Xue-Gong, Yang De-Ren.Passivation property of -Si：H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801.doi:10.7498/aps.62.198801 |
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Wang Xiang, Huang Rui, Song Jie, Guo Yan-Qing, Chen Kun-Ji, Li Wei.Tunnelling and storage of charges in a-SiNx/nc-Si/a-SiNx structures. Acta Physica Sinica, 2011, 60(2): 027301.doi:10.7498/aps.60.027301 |
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
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Hu Yue-Hui, Yin Sheng-Yi, Chen Guang-Hua, Wu Yue-Ying, Zhou Xiao-Ming, Zhou Jian-Er, Wang Qing, Zhang Wen-Li.Investigation of a-Si:H film characteristics influenced by magnetic field gradient in MWECR CVD plasma system. Acta Physica Sinica, 2004, 53(7): 2263-2269.doi:10.7498/aps.53.2263 |
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Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo.Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468.doi:10.7498/aps.52.1465 |
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WANG YONG-QIAN, CHEN CHANG-YONG, CHEN WEI-DE, YANG FU-HUA, DIAO HONG-WEI, XU ZHEN-JIA, ZHANG SHI-BIN, KONG GUANG-LIN, LIAO XIAN-BO.THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM. Acta Physica Sinica, 2001, 50(12): 2418-2422.doi:10.7498/aps.50.2418 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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WANG YIN-YUE, XU HUAI-ZHE, CHEN GUANG-HUA.INVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(2): 302-305.doi:10.7498/aps.41.302 |
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WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
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ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
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.LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica, 1989, 38(8): 1235-1244.doi:10.7498/aps.38.1235 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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