[1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong.Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica, 2024, 73(14): 144102.doi:10.7498/aps.73.20240302 |
[2] |
Wang Feng-Hao, Hu Xiao-Jun.Microstructural and photoelectrical properties of oxygen-ion-implanted microcrystalline diamond films. Acta Physica Sinica, 2013, 62(15): 158101.doi:10.7498/aps.62.158101 |
[3] |
Jiang Qiang, Mao Xiu-Juan, Zhou Xi-Ying, Chang Wen-Long, Shao Jia-Jia, Chen Ming.Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering. Acta Physica Sinica, 2013, 62(11): 118103.doi:10.7498/aps.62.118103 |
[4] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
[5] |
Liu Jie, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Su.Study on the optical characteristic of black silicon antireflection coating prepared by plasma immersion ion implantation. Acta Physica Sinica, 2012, 61(14): 148102.doi:10.7498/aps.61.148102 |
[6] |
Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304 |
[7] |
Zou Xiang-Yun, Yuan Jin-She, Jiang Yi-Xiang.The formation mechanism of the silicon nano-clusters embedded in silicon nitride. Acta Physica Sinica, 2012, 61(14): 148106.doi:10.7498/aps.61.148106 |
[8] |
Yang Xin-An, Li Jian-Qi, Ding Peng, Liu Fa-Min.Microstructure and magnetic properties of the cobalt ions implanted TiO2 films. Acta Physica Sinica, 2011, 60(3): 036803.doi:10.7498/aps.60.036803 |
[9] |
Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
[10] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
[11] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
[12] |
Zhang Gu-Ling, Wang Jiu-Li, Chen Guang-Liang, Feng Wen-Ran, Gu Wei-Chao, Niu Er-Wu, Fan Song-Hua, Liu Chi-Zi, Yang Si-Ze.Axial property of the inner surface of a metal tube processed by GEPSII. Acta Physica Sinica, 2007, 56(3): 1461-1466.doi:10.7498/aps.56.1461 |
[13] |
Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai.Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculation. Acta Physica Sinica, 2007, 56(11): 6634-6641.doi:10.7498/aps.56.6634 |
[14] |
Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
[15] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan.Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica, 2006, 55(11): 6080-6084.doi:10.7498/aps.55.6080 |
[16] |
Lu Ting, Zhou Hong-Yu, Ding Xiao-Ji, Wang Xin-Fu, Zhu Guang-Hua.The study of depth distribution for ion with low energy implanted into plant seeds and mechanism of biological effect. Acta Physica Sinica, 2005, 54(10): 4822-4826.doi:10.7498/aps.54.4822 |
[17] |
CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI.A STUDY ON BOND STRUCTURE OF NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLIDS IN TERMS OF X-RAY RADIAL DISTRIBUTION FUNCTIONS. Acta Physica Sinica, 1992, 41(10): 1620-1626.doi:10.7498/aps.41.1620 |
[18] |
YU YUE-HUI, LIN CHENG-LU, ZHANG SHUN-KAI, FANG ZI-ZEI, ZOU SHI-CHANG.AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION. Acta Physica Sinica, 1989, 38(12): 1996-2002.doi:10.7498/aps.38.1996 |
[19] |
ZHANG YUE-LU, BI SI-YUN, MEI LIANG-MO, LUAN KAI-ZHENG, LIU YI-HUA.STUDIES ON THE AMORPHOUS STATE FORMATION EFFECT OF BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON THIN FILMS. Acta Physica Sinica, 1988, 37(8): 1373-1375.doi:10.7498/aps.37.1373 |
[20] |
ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE.STUDIES ON PRODUCING AMORPHOUS ALLOY LAYERS BY BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON FILMS. Acta Physica Sinica, 1986, 35(7): 850-854.doi:10.7498/aps.35.850 |