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Teng Li-Hua, Mu Li-Jun.Effect of doping symmetry on electron spin relaxation dynamics in (110) GaAs/AlGaAs quantum wells. Acta Physica Sinica, 2017, 66(4): 046802.doi:10.7498/aps.66.046802 |
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Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong.Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica, 2011, 60(1): 016109.doi:10.7498/aps.60.016109 |
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Liang Wen-Xi, Zhu Peng-Fei, Wang Xuan, Nie Shou-Hua, Zhang Zhong-Chao, Cao Jian-Ming, Sheng Zheng-Ming, Zhang Jie.Ultrafast dynamics of thin-film aluminum observed by ultrafast electron diffraction. Acta Physica Sinica, 2009, 58(8): 5546-5551.doi:10.7498/aps.58.5546 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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Jiang Jin-Long, Li Wen-Jie, Zhou Li, Zhao Ru-Guang, Yang Wei-Sheng.Investigation of stable high-index silicon surfacesby means of LEED pattern analysis. Acta Physica Sinica, 2003, 52(1): 156-162.doi:10.7498/aps.52.156 |
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MA BING-XIAN, JIA YU, FAN XI-QING.INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110). Acta Physica Sinica, 1998, 47(6): 970-977.doi:10.7498/aps.47.970 |
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WANG EN-GE.SURFACE RELAXATION AND ITS INFLUENCE ON THE-FERMI LEVEL PINNING OF Zn/GaAs(110). Acta Physica Sinica, 1997, 46(1): 117-122.doi:10.7498/aps.46.117 |
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JIA YU, FAN XI-QING, MA BING-XIAN.CALCULATION OF ELECTRONIC STATES OF THE CdTe(110) RELAXED SURFACE. Acta Physica Sinica, 1997, 46(10): 1999-2006.doi:10.7498/aps.46.1999 |
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HU XIAO-MING, LIN ZHANG-DA.HYDROGEN ADSORPTION INDUCED PHASE TRANSITIONS ON Si(100) STUDIED BY LEED. Acta Physica Sinica, 1996, 45(6): 985-989.doi:10.7498/aps.45.985 |
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LI JIAN-HUA, MAI ZHEN-HONG, CUI SHU-FAN.X-RAY DOUBLE-CRYSTAL DIFFRACTION AND TOPOGRAPHY STUDY OF STRAIN RELAXED InGaAs/GaAs SUPERLATTICES. Acta Physica Sinica, 1993, 42(9): 1485-1490.doi:10.7498/aps.42.1485 |
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JIA JIN-FENG, ZHAO RU-GUANG, YANG WEI-SHENG.APPLICATION OF THE IMPROVED KLEED/CMTA METHOD ON Si(111) 31/2×31/2-Al SURFACE. Acta Physica Sinica, 1992, 41(5): 827-832.doi:10.7498/aps.41.827 |
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JIA JIN-FENG, LI YAN-FANG, ZHAO RU-GUANG, YANG WEI-SHENG.AN IMPROVED KLEED/CMTA METHOD AND ITS APPLICATION ON Cu(001)1×1 SURFACE. Acta Physica Sinica, 1992, 41(5): 819-826.doi:10.7498/aps.41.819 |
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XING YI-RONG, WU JI-AN, ZHANG JING-WNG, LIU CHI-ZI, WANG CHANG-HENG.A LEED STUDY OF ATOMIC STRUCTURE ON Si(113) SURFACE. Acta Physica Sinica, 1992, 41(11): 1806-1812.doi:10.7498/aps.41.1806 |
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LAN TIAN, XU FIE-YUE.A STUDY OF IIIA-VA AND IIB-VIA COMPOUNDS AB(110)AND AB(1010) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON DIFFRACTION. Acta Physica Sinica, 1990, 39(7): 66-76.doi:10.7498/aps.39.66 |
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HU ZI-PU, LI JIA, WU NAI-JUAN.THE Cs/C(0001)-(2×2) SURFACE STRUCTURE ANALYSIS BY LEED DYNAMICAL CALCULATION. Acta Physica Sinica, 1988, 37(12): 2068-2072.doi:10.7498/aps.37.2068 |
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XIA JIAN-BAI.RELAXATION EFFECTS OF THE (111) SURFACE OF Si AND GaAs. Acta Physica Sinica, 1984, 33(2): 143-153.doi:10.7498/aps.33.143 |
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XU YONG-NIAN, ZHANG KAI-MING.THE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110). Acta Physica Sinica, 1983, 32(2): 247-250.doi:10.7498/aps.32.247 |
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ZHANG KAI-MING, YE LING.A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS. Acta Physica Sinica, 1980, 29(1): 122-126.doi:10.7498/aps.29.122 |
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ZHANG KAI-MING, YE LING.THE SURFACE STRUCTURE OF GaAs(110). Acta Physica Sinica, 1980, 29(6): 686-692.doi:10.7498/aps.29.686 |
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