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Ma Lei, Jiang Bing, Chen Yi-Hao, Shen Bo, Peng Ying-Cai.Structure and optical absorption of nc-Si：H/α-SiC：H multilayers. Acta Physica Sinica, 2014, 63(13): 136804.doi:10.7498/aps.63.136804 |
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Niu Hua-Lei, Li Xiao-Na, Hu Bing, Dong Chuang, Jiang Xin.Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films. Acta Physica Sinica, 2009, 58(6): 4117-4122.doi:10.7498/aps.58.4117 |
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Wu Wen-Zhi, Yan Yu-Xi, Zheng Zhi-Ren, Jin Qin-Han, Liu Wei-Long, Zhang Jian-Ping, Yang Yan-Qiang, Su Wen-Hui.Steady-state and nanosecond time-resolved photoluminescence spectroscopies of aqueous CdTe quantum dots. Acta Physica Sinica, 2007, 56(5): 2926-2930.doi:10.7498/aps.56.2926 |
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Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
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TONG SONG, LIU XIANG-NA, GAO TING, YIN HAO, CHEN YI-JUN, BAO XI-MAO.INTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS. Acta Physica Sinica, 1999, 48(2): 378-384.doi:10.7498/aps.48.378 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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DU KAI-YING, RAO HAI-BO.NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica, 1994, 43(6): 966-972.doi:10.7498/aps.43.966 |
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CHEN GUANG-HUA, YAN SHAO-GUANG, ZHANG FANG-QING.A STUDY ON PHOTOLUMINESCENCE IN a-C:H FILMS. Acta Physica Sinica, 1992, 41(3): 500-505.doi:10.7498/aps.41.500 |
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WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
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WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG.OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica, 1988, 37(2): 189-196.doi:10.7498/aps.37.189 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN.EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica, 1986, 35(6): 725-730.doi:10.7498/aps.35.725 |
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HE YU-LIANG, YAN YONG-HONG.THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica, 1984, 33(10): 1472-1474.doi:10.7498/aps.33.1472 |
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