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Geng Xin, Zhang Jie-Yin, Lu Wen-Long, Ming Ming, Liu Fang-Ze, Fu Bin-Xiao, Chu Yi-Xin, Yan Mou-Hui, Wang Bao-Chuan, Zhang Xin-Ding, Guo Guo-Ping, Zhang Jian-Jun.Epitaxy and characterization of undoped Si/SiGe heterojunctions. Acta Physica Sinica, 2024, 73(11): 117302.doi:10.7498/aps.73.20240310 |
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Huang Xin-Mei, He Xiao-Li, Xu Qiang, Chen Ping, Zhang Yong, Gao Chun-Hong.Ionic-compound based high performance perovskite light emitting diodes. Acta Physica Sinica, 2022, 71(20): 208502.doi:10.7498/aps.71.20220858 |
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Wang Dang-Hui, Xu Tian-Han, Song Hai-Yang.Thermal expansion behaviors of epitaxial film for wurtzite GaN studied by using temperature-dependent Raman scattering. Acta Physica Sinica, 2016, 65(13): 130702.doi:10.7498/aps.65.130702 |
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Duan Bao-Xing, Yang Yin-Tang.Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica, 2014, 63(5): 057302.doi:10.7498/aps.63.057302 |
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Li Rong-Bin.Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition. Acta Physica Sinica, 2009, 58(2): 1287-1292.doi:10.7498/aps.58.1287 |
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Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue.Analysis of the leakage current in GaN-based heterostructure buffer layer. Acta Physica Sinica, 2009, 58(3): 1959-1965.doi:10.7498/aps.58.1959 |
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Wang Hai-Yun, Weng Hui-Min, Ling C. C..Study of GaN/SiC contact using slow positron beam. Acta Physica Sinica, 2008, 57(9): 5906-5910.doi:10.7498/aps.57.5906 |
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Zhang Chao, Meng Yang, Yan Chao, Tang Xin, Wang Yong-Liang, Zhang Qing-Yu.Study on asymmetricall epitaxial behavior of Cu-Au system by molecular dynamics simulation. Acta Physica Sinica, 2007, 56(1): 452-458.doi:10.7498/aps.56.452 |
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
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Sun Xian-Kai, Lin Bi-Xia, Zhu Jun-Jie, Zhang Yang, Fu Zhu-Xi.Studies on the strain and its effect on defects in heteroepitaxial ZnO films prepared by LP-OCVD method. Acta Physica Sinica, 2005, 54(6): 2899-2903.doi:10.7498/aps.54.2899 |
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Meng Yang, Zhang Qing-Yu.Study on the evolution of Au heteroepitaxial islands on Cu(001) by molecular dynamics simulation. Acta Physica Sinica, 2005, 54(12): 5804-5813.doi:10.7498/aps.54.5804 |
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao.Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica, 2005, 54(5): 2247-2251.doi:10.7498/aps.54.2247 |
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
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Feng Qian, Hao Yue, Zhang Xiao-Ju, Liu Yu-Long.Characterization of Mg-doped GaN. Acta Physica Sinica, 2004, 53(2): 626-630.doi:10.7498/aps.53.626 |
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
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KANG JUN-YONG, HUANG QI-SHENG, T.OGAWA.DEFECTS IN GaN EPILAYERS. Acta Physica Sinica, 1999, 48(7): 1372-1380.doi:10.7498/aps.48.1372 |
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ZHANG HAO-XIANG, LU HUAN-MING, YE ZHI-ZHEN, ZHAO BING-HUI, WANG LEI, QUE DUAN-LIN.SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE. Acta Physica Sinica, 1999, 48(7): 1315-1319.doi:10.7498/aps.48.1315 |
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WANG SHAO-QING, LIU QUAN-PU, YE HENG-QIANG.AN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN. Acta Physica Sinica, 1998, 47(11): 1858-1861.doi:10.7498/aps.47.1858 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
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