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Chen Lu, Li Ye-Fei, Zheng Qiao-Ling, Liu Qing-Kun, Gao Yi-Min, Li Bo, Zhou Chang-Meng.Theoretical study of atomic relaxation, surface energy, electronic structure and properties of B2- and B19'-NiTi surfaces. Acta Physica Sinica, 2019, 68(5): 053101.doi:10.7498/aps.68.20181944 |
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Teng Li-Hua, Mu Li-Jun.Effect of doping symmetry on electron spin relaxation dynamics in (110) GaAs/AlGaAs quantum wells. Acta Physica Sinica, 2017, 66(4): 046802.doi:10.7498/aps.66.046802 |
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Han Yuan-Chun, Bao Tmurbagan.Investigation of ultrafast relaxation dynamic process of water-soluble TGA-CdTe quantum dots. Acta Physica Sinica, 2015, 64(11): 113201.doi:10.7498/aps.64.113201 |
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Zhu Meng-Long, Dong Yu-Lan, Zhong Hai-Zheng, He Jun.Exciton spin relaxation dynamics in CdTe quantum dots at room temperature. Acta Physica Sinica, 2014, 63(12): 127202.doi:10.7498/aps.63.127202 |
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Wang Yu-Yu, Zhao Yong-Tao, Xiao Guo-Qing, Fang Yan, Zhang Xiao-An, Wang Tie-Shan, Wang Shi-Wei, Peng Hai-Bo.Electron emission induced by the interaction of highly charged ions 207Pbq+(24≤q≤36) with solid surface of Si(110). Acta Physica Sinica, 2006, 55(2): 673-676.doi:10.7498/aps.55.673 |
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Wu Yu, Jiao Zhong-Xing, Lei Liang, Wen Jin-Hui, Lai Tian-Shu, Lin Wei-Zhu.Electron spin relaxation and momentum relaxation in semiconductor quantum wells. Acta Physica Sinica, 2006, 55(6): 2961-2965.doi:10.7498/aps.55.2961 |
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Zhang Yong-Fan, Ding Kai-Ning, Lin Wei, Li Jun-Qian.A first principle study on the geometry and the electronic structures of VC(001) relaxed surface. Acta Physica Sinica, 2005, 54(3): 1352-1360.doi:10.7498/aps.54.1352 |
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LIU FENG, YAN SHOU-SHENG.SIMULATION ON LOCAL FLUX CREEP IN NON-IDEAL TYPE-Ⅱ SUPERCONDUCTORS:THE EFFECT O F NON-UNIFORM PINNING POTENTIAL AND SURFACE POTENTIAL. Acta Physica Sinica, 2000, 49(9): 1829-1837.doi:10.7498/aps.49.1829 |
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XHEN SAN-GUO, JIA YU, MA BING-XIAN, FAN XI-QING.CALCULATION OF THE ATOMIC GEOMETRIES AND ELECTRONIC PROPERTIES OF ZnS (110) SURFACE. Acta Physica Sinica, 1998, 47(11): 1879-1884.doi:10.7498/aps.47.1879 |
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MA BING-XIAN, JIA YU, FAN XI-QING.INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110). Acta Physica Sinica, 1998, 47(6): 970-977.doi:10.7498/aps.47.970 |
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WANG EN-GE.SURFACE RELAXATION AND ITS INFLUENCE ON THE-FERMI LEVEL PINNING OF Zn/GaAs(110). Acta Physica Sinica, 1997, 46(1): 117-122.doi:10.7498/aps.46.117 |
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ZHANG HAI-FENG, LI YONG-PING, FANG RONG-CHUAN, BAN DA-YAN.ELECTRONIC STRUCTURE OF ALKALI-METALS ADSORBED ON CdTe(111) SURFACES. Acta Physica Sinica, 1996, 45(12): 2047-2053.doi:10.7498/aps.45.2047 |
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Zhang Hai-Feng, Li Yong-Peng, Fang Rong-Chuan, Yang Feng-Yuan, Xu Peng-Shou.. Acta Physica Sinica, 1995, 44(2): 280-286.doi:10.7498/aps.44.280 |
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LAN TIAN, XU FIE-YUE.A STUDY OF IIIA-VA AND IIB-VIA COMPOUNDS AB(110)AND AB(1010) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON DIFFRACTION. Acta Physica Sinica, 1990, 39(7): 66-76.doi:10.7498/aps.39.66 |
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YANG HONG-NING, LIN BU-ZHENG, FANG JUN-XIN.A STUDY ON THE RELAXATION MECHANISM OF THE QUASI-POSITRONIUM. Acta Physica Sinica, 1986, 35(6): 697-703.doi:10.7498/aps.35.697 |
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XIA JIAN-BAI.RELAXATION EFFECTS OF THE (111) SURFACE OF Si AND GaAs. Acta Physica Sinica, 1984, 33(2): 143-153.doi:10.7498/aps.33.143 |
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CHEN SHU-CHUN, DAI FENG-MEI.MULTIPHONON RELAXATION OF 4F3/2 STATES AND ELECTRON-PHONON INTERACTION IN Nd3+-GLASSES. Acta Physica Sinica, 1981, 30(5): 624-632.doi:10.7498/aps.30.624 |
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ZHANG KAI-MING, YE LING.A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS. Acta Physica Sinica, 1980, 29(1): 122-126.doi:10.7498/aps.29.122 |
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