| [1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong.Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica, 2024, 73(14): 144102.doi:10.7498/aps.73.20240302 |
| [2] |
Li Zhi-Qiang, Tan Xiao-Yu, Duan Xin-Lei, Zhang Jing-Yi, Yang Jia-Yue.Deep learning molecular dynamics simulation on microwave high-temperature dielectric function of silicon nitride. Acta Physica Sinica, 2022, 71(24): 247803.doi:10.7498/aps.71.20221002 |
| [3] |
Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming.Total ionizing dose effects ofγand X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica, 2019, 68(3): 038501.doi:10.7498/aps.68.20181661 |
| [4] |
Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong.Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica, 2015, 64(23): 238502.doi:10.7498/aps.64.238502 |
| [5] |
Zhang Wen-Ping, Ma Zhong-Yuan, Xu Jun, Xu Ling, Li Wei, Chen Kun-Ji, Huang Xin-Fan, Feng Duan.Simulation of localized surface plasmon resonance of hexagonal Ag nanoarrays and amorphous oxidized silicon nitride. Acta Physica Sinica, 2015, 64(17): 177301.doi:10.7498/aps.64.177301 |
| [6] |
Yu Ben-Hai, Chen Dong.Phase transition, electronic and optical properties of Si3N4 new phases at high pressure with density functional theory. Acta Physica Sinica, 2014, 63(4): 047101.doi:10.7498/aps.63.047101 |
| [7] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui.Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801.doi:10.7498/aps.63.037801 |
| [8] |
Jiang Qiang, Mao Xiu-Juan, Zhou Xi-Ying, Chang Wen-Long, Shao Jia-Jia, Chen Ming.Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering. Acta Physica Sinica, 2013, 62(11): 118103.doi:10.7498/aps.62.118103 |
| [9] |
Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304 |
| [10] |
Zou Xiang-Yun, Yuan Jin-She, Jiang Yi-Xiang.The formation mechanism of the silicon nano-clusters embedded in silicon nitride. Acta Physica Sinica, 2012, 61(14): 148106.doi:10.7498/aps.61.148106 |
| [11] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
| [12] |
Wang Quan, Ding Jian-Ning, He Yu-Liang, Xue Wei, Fan Zhen.Mesoscopic mechanical characterization of hydrogenated silicon thin film and the intrinsic relationship with the microstructure. Acta Physica Sinica, 2007, 56(8): 4834-4840.doi:10.7498/aps.56.4834 |
| [13] |
Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai.Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculation. Acta Physica Sinica, 2007, 56(11): 6634-6641.doi:10.7498/aps.56.6634 |
| [14] |
Zhang Chao, Sun Jiu-Xun, Tian Rong-Gang, Zou Shi-Yong.Analytic equations of state and thermo-physical properties for the α, β, and γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5969-5973.doi:10.7498/aps.56.5969 |
| [15] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan.Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica, 2006, 55(11): 6080-6084.doi:10.7498/aps.55.6080 |
| [16] |
Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng.Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica, 2003, 52(3): 687-691.doi:10.7498/aps.52.687 |
| [17] |
TU XIAN-HUA, LI DAO-HUO.BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385.doi:10.7498/aps.49.1383 |
| [18] |
YE CHAO, NING ZHAO-YUAN, MA YUN-XIU, SHEN MING-RONG, WANG HAO, GAN ZHAO-QIANG.DIELECTRIC PROPERTIES OF SiNx FILMS DEPOSITED AT LOW TEMPERATURE. Acta Physica Sinica, 1997, 46(6): 1199-1205.doi:10.7498/aps.46.1199 |
| [19] |
CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI.A STUDY ON BOND STRUCTURE OF NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLIDS IN TERMS OF X-RAY RADIAL DISTRIBUTION FUNCTIONS. Acta Physica Sinica, 1992, 41(10): 1620-1626.doi:10.7498/aps.41.1620 |
| [20] |
CHEN GUO-MING, CHEN GUO-LIANG, YANG JIE, ZOU SHI-CHANG.INVESTIGATION OF THIN FILM Si3N4 FORMED BY LOW ENERGY ION IMPLANTATION. Acta Physica Sinica, 1988, 37(3): 475-480.doi:10.7498/aps.37.475 |
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