| [1] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
| [2] |
He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Qi Wei-Jing, Li Ping.A new method to determine the dislocation density in wurtzite n-GaN. Acta Physica Sinica, 2016, 65(16): 167201.doi:10.7498/aps.65.167201 |
| [3] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua.Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501.doi:10.7498/aps.64.077501 |
| [4] |
Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong.Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica, 2015, 64(7): 078103.doi:10.7498/aps.64.078103 |
| [5] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
| [6] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
| [7] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
| [8] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
| [9] |
Zhou Nai-Gen, Zhou Lang, Du Dan-Xu.Structure and formation of misfit dislocations in an epitaxial fcc film. Acta Physica Sinica, 2006, 55(1): 372-377.doi:10.7498/aps.55.372 |
| [10] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
| [11] |
Zhou Nai-Gen, Zhou Lang.Conditions for formation of misfit dislocation in epitaxial films — a molecular dynamics study. Acta Physica Sinica, 2005, 54(7): 3278-3283.doi:10.7498/aps.54.3278 |
| [12] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
| [13] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG.FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica, 1998, 47(8): 1346-1353.doi:10.7498/aps.47.1346 |
| [14] |
YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG.THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica, 1998, 47(11): 1896-1899.doi:10.7498/aps.47.1896 |
| [15] |
LU LI-WU, ZHOU JIE, LIANG JI-BEN, KONG MEI-YING.DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE. Acta Physica Sinica, 1993, 42(5): 817-823.doi:10.7498/aps.42.817 |
| [16] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
| [17] |
YANG SHUN-HUA, HU XIAO-FENG, MA RU-ZHANG.THE ELASTIC PROPERTIES OF A DISLOCATION IN TWO PHASE MEDIUM. Acta Physica Sinica, 1989, 38(9): 1483-1491.doi:10.7498/aps.38.1483 |
| [18] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
| [19] |
LIU ZHEN-MAO, WANG GUI-HUA.A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(9): 1164-1179.doi:10.7498/aps.29.1164 |
| [20] |
.. Acta Physica Sinica, 1975, 24(2): 83-86.doi:10.7498/aps.24.83 |
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