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Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong.Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801.doi:10.7498/aps.61.147801 |
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Zhou Chuan-Cang, Liu Fa-Min, Ding Peng, Zhong Wen-Wu, Cai Lu-Gang, Zeng Le-Gui.Hydrothermal synthesis, structure characterization and antiferromagnetic properties of thortveitite-type β-Mn2V2O7. Acta Physica Sinica, 2011, 60(7): 077504.doi:10.7498/aps.60.077504 |
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
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Li Jian-Jun, Yu Jun, Li Jia, Wang Meng, Li Yu-Bin, Wu Yun-Yi, Gao Jun-Xiong, Wang Yun-Bo.Properties of La and V codoped Bi4Ti3O12 thin film prepared by sol-gel method. Acta Physica Sinica, 2010, 59(2): 1302-1307.doi:10.7498/aps.59.1302 |
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Fu Shi-Liu, Chai Fei, Chen Jie, Zhang Han-Yan.Investigation of the charge-transfer spectra of Ce4+-doped Ca2SnO4 with one-dimensional structure. Acta Physica Sinica, 2008, 57(5): 3254-3259.doi:10.7498/aps.57.3254 |
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.Preparation and characterization of SrBi2Ta2O9/Bi4Ti3O12 multiple thin films on p-Si substrate. Acta Physica Sinica, 2007, 56(12): 7315-7319.doi:10.7498/aps.56.7315 |
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Wang Hua, Ren Ming-Fang.Synthesis and characteristics of Bi3.25La0.75Ti3O12 ferroelectric thin films by sol-gel technology. Acta Physica Sinica, 2006, 55(6): 3152-3156.doi:10.7498/aps.55.3152 |
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming.Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica, 2006, 55(6): 2992-2996.doi:10.7498/aps.55.2992 |
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Yang Xue-Wen, Zheng Jia-Gui, Zhang Jing-Quan, Feng Liang-Huan, Cai Wei, Cai Ya-Ping, Li Wei, Li Bing, Lei Zhi, Wu Li-Li.Characteristics of CdTe solar cell device. Acta Physica Sinica, 2006, 55(5): 2504-2507.doi:10.7498/aps.55.2504 |
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Yan Cheng-Feng, Zhao Guang-Jun, Hang Yin, Zhang Lian-Han, Xu Jun.Crystal structure and optical characterization of cerium-doped Lu2Si2O7. Acta Physica Sinica, 2005, 54(8): 3745-3748.doi:10.7498/aps.54.3745 |
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Ma Jian-Hua, Meng Xiang-Jian, Sun Jing-Lan, Hu Zhi-Gao, Chu Jun-Hao.Optical properties of Bi3.25La0.75Ti3O12 and Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method. Acta Physica Sinica, 2005, 54(8): 3900-3904.doi:10.7498/aps.54.3900 |
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He Meng, Lü Hui-Bin, Zhou Yue-Liang, Cheng Bo-Lin, Chen Zheng-Hao, Jin Kui-Juan, Yang Guo-Zhen.Fabrication and characterization of YBa2Cu3O7－δ/SrNb0.01Ti0.99O3 p-n junctions. Acta Physica Sinica, 2005, 54(3): 1370-1372.doi:10.7498/aps.54.1370 |
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Fu Shi-Liu, Dai Jun, Ding Qiu-Ke, Zhao Wei-Ren.Investigation of the spectra of Sr2CeO4 due to charge transfer transition. Acta Physica Sinica, 2005, 54(5): 2369-2373.doi:10.7498/aps.54.2369 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Xin Yu, Xu Sheng-Hua.Effect of C═C content on I-V characteristics of fluorinated amorphous carbon thin films. Acta Physica Sinica, 2004, 53(5): 1496-1500.doi:10.7498/aps.53.1496 |
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Wang Hua.Studies on the preparation and characterization of Bi4Ti3O12 thin films on p-Si substrates. Acta Physica Sinica, 2004, 53(4): 1265-1270.doi:10.7498/aps.53.1265 |
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ZHAO YONG, ZHUGE XIANG-BIN, HE YE-YE.CHARACTERISTICS OF TEMPERATURE DEPENDENCE OF CRITICAL CURRENT IN TYPICAL GRANULAR SYSTEM YBa2Cu3O7/V2O5. Acta Physica Sinica, 1994, 43(10): 1693-1703.doi:10.7498/aps.43.1693 |
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PENG CHENG, SHENG CHI, SUN HENG-HUI.NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(6): 1025-1029.doi:10.7498/aps.37.1025 |
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WANG PEI-LING, LI DE-YU.THE CRYSTAL STRUCTURE OF Bi2Pb2V2O10. Acta Physica Sinica, 1985, 34(2): 235-240.doi:10.7498/aps.34.235 |
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YANG DA-LIN, WAN MEI-XIANG, ZHANG JING-WEN, QIAN REN-YUAN.DRIFT MOBILITIES OF CARRIERS IN AMORPHOUS FILMS OF PVCz-TNF CHARGE-TRANSFER COMPLEXES. Acta Physica Sinica, 1982, 31(12): 104-109.doi:10.7498/aps.31.104-2 |
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