[1] |
Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei.Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica, 2024, 73(11): 117101.doi:10.7498/aps.73.20240175 |
[2] |
Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping.Carrier mobility in doped Sb2Se3based on deformation potential theory. Acta Physica Sinica, 2024, 73(4): 047101.doi:10.7498/aps.73.20231406 |
[3] |
Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue.Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101.doi:10.7498/aps.67.20171969 |
[4] |
Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran.Logical integration device for two-dimensional semiconductor transition metal sulfide. Acta Physica Sinica, 2017, 66(21): 218503.doi:10.7498/aps.66.218503 |
[5] |
Zhang Li-Yong, Fang Liang, Peng Xiang-Yang.First-principles study on multiphase property and phase transition of monolayer MoS2. Acta Physica Sinica, 2016, 65(12): 127101.doi:10.7498/aps.65.127101 |
[6] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
[7] |
Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo.Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica, 2014, 63(17): 177201.doi:10.7498/aps.63.177201 |
[8] |
Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502 |
[9] |
Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian.Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor. Acta Physica Sinica, 2014, 63(19): 197302.doi:10.7498/aps.63.197302 |
[10] |
Liu Rui-Lan, Wang Xu-Liang, Tang Chao.Identification for hole transporting properties of NPB based on particle swarm optimization algorithm. Acta Physica Sinica, 2014, 63(2): 028105.doi:10.7498/aps.63.028105 |
[11] |
Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
[12] |
Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101 |
[13] |
Yu Huang-Zhong.Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica, 2012, 61(8): 087204.doi:10.7498/aps.61.087204 |
[14] |
Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong.Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801.doi:10.7498/aps.61.147801 |
[15] |
Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117304.doi:10.7498/aps.60.117304 |
[16] |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305 |
[17] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
[18] |
Xu Xue-Mei, Peng Jing-Cui, Li Hong-Jian, Qu Shu, Zhao Chu-Jun, Luo Xiao-Hua.Effects of organic/organic interface on recombination efficiency in double-layer organic diodes. Acta Physica Sinica, 2004, 53(1): 286-290.doi:10.7498/aps.53.286 |
[19] |
YUAN DE-RONG, QIAO LING-ZHI.KINK SOLITON EXCITATION IN HYDROGEN BONDED CHAIN WITH ASYMMETRIC DOUBLE WELL POTENTIALS. Acta Physica Sinica, 2001, 50(3): 394-397.doi:10.7498/aps.50.394 |
[20] |
LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua.OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619.doi:10.7498/aps.49.1614 |