[1] |
Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Ma Teng, Cai Zong-Qi, Chen Yi-Qiang.Study on characteristics of neutron-induced leakage current increase for SiC power devices. Acta Physica Sinica, 2023, 72(18): 186102.doi:10.7498/aps.72.20230976 |
[2] |
Zhang Guo-Shuai, Yin Chao, Wang Zhao-Fan, Chen Ze, Mao Shi-Feng, Ye Min-You.Simulation of neutron irradiation-induced recrystallization of tungsten. Acta Physica Sinica, 2023, 72(16): 162801.doi:10.7498/aps.72.20230531 |
[3] |
Wei Wen-Jing, Gao Xu-Dong, Lü Liang-Liang, Xu Nan-Nan, Li Gong-Ping.Simulation study of neutron radiation damage to cadmium zinc telluride. Acta Physica Sinica, 2022, 71(22): 226102.doi:10.7498/aps.71.20221195 |
[4] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
[5] |
Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren.Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica, 2015, 64(9): 096105.doi:10.7498/aps.64.096105 |
[6] |
Zeng Jun-Zhe, Li Yu-Dong, Wen Lin, He Cheng-Fa, Guo Qi, Wang Bo, Maria, Wei Yin, Wang Hai-Jiao, Wu Da-You, Wang Fan, Zhou Hang.Effects of proton and neutron irradiation on dark signal of CCD. Acta Physica Sinica, 2015, 64(19): 194208.doi:10.7498/aps.64.194208 |
[7] |
Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi.Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2014, 63(4): 047202.doi:10.7498/aps.63.047202 |
[8] |
Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang.Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301.doi:10.7498/aps.62.197301 |
[9] |
Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica, 2009, 58(2): 1293-1297.doi:10.7498/aps.58.1293 |
[10] |
Cui Can, Ma Xiang-Yang, Yang De-Ren.Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica, 2008, 57(2): 1037-1042.doi:10.7498/aps.57.1037 |
[11] |
Xu Jin, Li Fu-Long, Yang De-Ren.Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116.doi:10.7498/aps.56.4113 |
[12] |
Zhang Xiao-Dan, Zhao Ying, Gao Yang-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen.Fabrication of intrinsic microcrystalline silicon thin films used for solar cells and its structure. Acta Physica Sinica, 2005, 54(10): 4874-4878.doi:10.7498/aps.54.4874 |
[13] |
Li Yang-Xian, Yang Shuai, Chen Gui-Feng, Ma Qiao-Yun, Niu Ping-Juan, Chen Dong-Feng, Li Hong-Tao, Wang Bao-Yi.Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon. Acta Physica Sinica, 2005, 54(4): 1783-1787.doi:10.7498/aps.54.1783 |
[14] |
Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao.FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica, 2005, 54(5): 2256-2260.doi:10.7498/aps.54.2256 |
[15] |
Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin.Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica, 2004, 53(2): 550-554.doi:10.7498/aps.53.550 |
[16] |
Jiang Le, Yang De-Ren, Yu Xue-Gong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin.Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica, 2003, 52(8): 2000-2004.doi:10.7498/aps.52.2000 |
[17] |
Feng Xi-Qi, Lin Qi-Sheng, Man Zhen-Yong, Liao Jin-Ying, Hu Guan-Qin.. Acta Physica Sinica, 2002, 51(2): 315-321.doi:10.7498/aps.51.315 |
[18] |
LIN XU-LUN.A NEW EPR SPECTRUM IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1986, 35(6): 716-724.doi:10.7498/aps.35.716 |
[19] |
ZHANG YU-FENG, DU YONG-CHANG, WENG SHI-FU, MENG XIANG-TI, ZHANG BING-ZHONG.INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica, 1985, 34(7): 849-859.doi:10.7498/aps.34.849 |
[20] |
DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI.DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485.doi:10.7498/aps.33.477 |