[1] |
Li Jia-Hong, Sun Gui-Hua, Zhang Qing-Li, Wang Xiao-Fei, Zhang De-Ming, Liu Wen-Peng, Gao Jin-Yun, Zheng Li-Li, Han Song, Chen Zhao, Yin Shao-Tang.Effect of annealing atmosphere on the structure and spectral properties of GdScO3and Yb:GdScO3crystals. Acta Physica Sinica, 2022, 71(16): 164206.doi:10.7498/aps.71.20220196 |
[2] |
Zhang Guan-Jie, Yang Hao, Zhang Nan.Research progress of the investigation of intrinsic and extrinsic origin of piezoelectric materials by X-ray diffraction. Acta Physica Sinica, 2020, 69(12): 127711.doi:10.7498/aps.69.20200301 |
[3] |
Huang Hao, Zhang Kan, Wu Ming, Li Hu, Wang Min-Juan, Zhang Shu-Ming, Chen Jian-Hong, Wen Mao.Comparison between axial residual stresses measured by Raman spectroscopy and X-ray diffraction in SiC fiber reinforced titanium matrix composite. Acta Physica Sinica, 2018, 67(19): 197203.doi:10.7498/aps.67.20181157 |
[4] |
Xu Si-Wei, Wang Li, Shen Xiang.Raman scattering and X-ray photoelectron spectra of GexSb20Se80-x Glasses. Acta Physica Sinica, 2015, 64(22): 223302.doi:10.7498/aps.64.223302 |
[5] |
Chen Ren-Gang, Deng Jin-Xiang, Chen Liang, Kong Le, Cui Min, Gao Xue-Fei, Pang Tian-Qi, Miao Yi-Ming.Spectroscopic ellipsometry study of the Zn3N2 films prepared by radio-frequency sputtering. Acta Physica Sinica, 2014, 63(13): 137701.doi:10.7498/aps.63.137701 |
[6] |
Pan Hui-Ping, Cheng Feng-Feng, Li Lin, Horng Ray-Hua, Yao Shu-De.Structrual analyses of Ga2+xO3-x thin films grown on sapphire substrates. Acta Physica Sinica, 2013, 62(4): 048801.doi:10.7498/aps.62.048801 |
[7] |
Li Jia, Fang Qi, Luo Bing-Chi, Zhou Min-Jie, Li Kai, Wu Wei-Dong.Residual stress analysis by grazing-incidence X-ray diffraction on beryllium films. Acta Physica Sinica, 2013, 62(14): 140701.doi:10.7498/aps.62.140701 |
[8] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
[9] |
Han Liang, Liu De-Lian, Chen Xian, Zhao Yu-Qing.The effect of the interlayer CrN on adhesion characteristics of ta-C films on high-speed steel substrate. Acta Physica Sinica, 2013, 62(9): 096802.doi:10.7498/aps.62.096802 |
[10] |
Wang Li-Hong, You Jing-Lin, Wang Yuan-Yuan, Zheng Shao-Bo, Simon Patrick, Hou Min, Ji Zi-Fang.Temperature dependent Raman spectra and micro-structure study of hexagonal MgTiO3 crystal. Acta Physica Sinica, 2011, 60(10): 104209.doi:10.7498/aps.60.104209 |
[11] |
Yang Chang-Hu, Ma Zhong-Quan, Xu Fei, Zhao Lei, Li Feng, He Bo.Raman spectral analysis of TiO2 thin films doped with rare-earth yttrium and lanthanum. Acta Physica Sinica, 2010, 59(9): 6549-6555.doi:10.7498/aps.59.6549 |
[12] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
[13] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
[14] |
Li Yong-Hua, Liu Chang-Sheng, Meng Fan-Ling, Wang Yu-Ming, Zheng Wei-Tao.X-ray photoelectron spectroscopy analysis of the effect of thickness on the transformation temperature of NiTi alloy thin films. Acta Physica Sinica, 2009, 58(4): 2742-2745.doi:10.7498/aps.58.2742 |
[15] |
Duan Bao-Xing, Yang Yin-Tang.Calculation of Raman shifts of Si(1-x)Gex and amorphous silicon using Keating model. Acta Physica Sinica, 2009, 58(10): 7114-7118.doi:10.7498/aps.58.7114 |
[16] |
Li Hong-Tao, Luo Yi, Xi Guang-Yi, Wang Lai, Jiang Yang, Zhao Wei, Han Yan-Jun, Hao Zhi-Biao, Sun Chang-Zheng.Thickness measurement of GaN films by X-ray diffraction. Acta Physica Sinica, 2008, 57(11): 7119-7125.doi:10.7498/aps.57.7119 |
[17] |
Liu Guo-Han, Ding Yi, Zhu Xiu-Hong, Chen Guang-Hua, He De-Yan.Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD. Acta Physica Sinica, 2006, 55(11): 6147-6151.doi:10.7498/aps.55.6147 |
[18] |
Bai Ying, Lan Yan-Na, Mo Yu-Jun.Temperature measurement from the Raman spectra of porous silicon. Acta Physica Sinica, 2005, 54(10): 4654-4658.doi:10.7498/aps.54.4654 |
[19] |
Du Xiao-Song, S. Hak, O. C. Rogojanu, T. Hibma.X-ray study of chromium oxide films epitaxially grown on MgO. Acta Physica Sinica, 2004, 53(10): 3510-3514.doi:10.7498/aps.53.3510 |
[20] |
Chen Dun-Jun, Shen Bo, Zhang Kai-Xiao, Deng Yong-Zhen, Fan Jie, Zhang Rong, Shi Yi, Zheng You-Dou.Structural properties of GaN1-xPx films. Acta Physica Sinica, 2003, 52(7): 1788-1791.doi:10.7498/aps.52.1788 |