| [1] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
| [2] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
| [3] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
| [4] |
Hou Zhen-Tao, Li Yan-Ru, Liu He-Yan, Dai Xue-Fang, Liu Guo-Dong, Liu Cai-Chi, Li Ying.Effect of Ga vacancy on the magnetism in GaN:Gd: First-principles calculation. Acta Physica Sinica, 2016, 65(12): 127102.doi:10.7498/aps.65.127102 |
| [5] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
| [6] |
Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong.Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103.doi:10.7498/aps.62.017103 |
| [7] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
| [8] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
| [9] |
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui.Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957.doi:10.7498/aps.58.7952 |
| [10] |
Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
| [11] |
Zhou Mei, Chang Qing-Ying, Zhao De-Gang.A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553.doi:10.7498/aps.57.2548 |
| [12] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
| [13] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
| [14] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
| [15] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai.Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981.doi:10.7498/aps.55.2977 |
| [16] |
Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min.Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica, 2005, 54(12): 5830-5836.doi:10.7498/aps.54.5830 |
| [17] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
| [18] |
Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
| [19] |
Hao Jing-An, Zheng Hao-Ping.Theoretical calculation of structures and properties of Ga6N6 cluster. Acta Physica Sinica, 2004, 53(4): 1044-1049.doi:10.7498/aps.53.1044 |
| [20] |
Shen Yao-Wen, Kang Jun-Yong.. Acta Physica Sinica, 2002, 51(3): 645-648.doi:10.7498/aps.51.645 |
下载: