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Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong.Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica, 2018, 67(12): 128101.doi:10.7498/aps.67.20180588 |
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Zhang Zeng-Xing, Li Dong.Novel p-n junctions based on ambipolar two-dimensional crystals. Acta Physica Sinica, 2017, 66(21): 217302.doi:10.7498/aps.66.217302 |
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Zhou Mei, Li Chun-Yan, Zhao De-Gang.A new method to estimate the p-GaN carrier concentration by analyzing the reversed current-voltage characteristic curve of p-n+ junction diode. Acta Physica Sinica, 2016, 65(19): 197302.doi:10.7498/aps.65.197302 |
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Wang Li-Shi, Xu Jian-Ping, Shi Shao-Bo, Zhang Xiao-Song, Ren Zhi-Rui, Ge Lin, Li Lan.Influence of ZnS modification on the I-V performance of ZnO nanorods：P3HT composite films. Acta Physica Sinica, 2013, 62(19): 196103.doi:10.7498/aps.62.196103 |
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Jiang Bing-Yi, Zheng Jian-Bang, Wang Chun-Feng, Hao Juan, Cao Chong-De.Optimization of quantum dot solar cells based on structures of GaAs/InAs-GaAs/ZnSe. Acta Physica Sinica, 2012, 61(13): 138801.doi:10.7498/aps.61.138801 |
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Sun Peng, Hu Ming, Liu Bo, Sun Feng-Yun, Xu Lu-Jia.Electrical properties of the metal/porous silicon/Si(M/PS/Si) microstructure. Acta Physica Sinica, 2011, 60(5): 057303.doi:10.7498/aps.60.057303 |
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Li Sheng-Tao, Cheng Peng-Fei, Yang Yan, Zhang Le.A new method for investigating the conduction of ZnO-based varistor ceramics. Acta Physica Sinica, 2009, 58(4): 2543-2548.doi:10.7498/aps.58.2543 |
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Chen Huan, Peng Zhen-Kang, Fu Gang.The nonlinear sensing property and electric mechanism of carbon humidity-sensitive membranes. Acta Physica Sinica, 2009, 58(11): 7904-7908.doi:10.7498/aps.58.7904 |
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Zhang Wei, Li Meng-Ke, Wei Qiang, Cao Lu, Yang Zhi, Qiao Shuang-Shuang.Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors. Acta Physica Sinica, 2008, 57(9): 5887-5892.doi:10.7498/aps.57.5887 |
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Yuan Guang, Guo Da-Bo, Gu Chang-Zhi, Dou Yan, Song Hang.Field emission from single diamond particle. Acta Physica Sinica, 2007, 56(1): 143-146.doi:10.7498/aps.56.143 |
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Quan Zhi-Jue, Sun Li-Zhong, Ye Zhen-Hua, Li Zhi-Feng, Lu Wei.Optimization design of the band profiles of HgCdTe heterojunctions. Acta Physica Sinica, 2006, 55(7): 3611-3616.doi:10.7498/aps.55.3611 |
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Liu Li-Feng, Lü Hui-Bin, Dai Shou-Yu, Chen Zheng-Hao.Rectifying characteristics of La0.9Sr0.1MnO3/Si p-n diodes. Acta Physica Sinica, 2005, 54(5): 2342-2345.doi:10.7498/aps.54.2342 |
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Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Xin Yu, Xu Sheng-Hua.Effect of C═C content on I-V characteristics of fluorinated amorphous carbon thin films. Acta Physica Sinica, 2004, 53(5): 1496-1500.doi:10.7498/aps.53.1496 |
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Liu Yan-Xin, Wang Yong-Chang, Du Shao-Yi.The study of I-V characteristics of single-electron triple-barrier tunnel-junction. Acta Physica Sinica, 2004, 53(8): 2734-2740.doi:10.7498/aps.53.2734 |
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Chen Gui-Bin, Lu Wei, Cai Wei-Ying, Li Zhi-Feng, Chen Xiao-Shuang, Hu Xiao-Ning, He Li, Shen Xue-Chu.Optimizing boron implantation dose of HgCdTe infrared detectors. Acta Physica Sinica, 2004, 53(3): 911-914.doi:10.7498/aps.53.911 |
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Liu Ming, Liu Hong, He Yu-Ｌiang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
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WANG JING-SONG, YE GAO-XIANG, XU YU-QING, ZHANG QI-RUI.THE I-V CHARACTERISTICS OF SILVER THIN FILM ON THE RANDOM FRACTAL SUBSTRATE. Acta Physica Sinica, 1994, 43(10): 1688-1692.doi:10.7498/aps.43.1688 |
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LIU ZENG-RONG, JIANG XIA-MEI, HUN ZHI-BIN, GU GUO-QING.THE SUB-STEPS OF I-V CHARACTERISTICS IN JOSEPHSON JUNCTION. Acta Physica Sinica, 1990, 39(5): 823-829.doi:10.7498/aps.39.823 |
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