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Liu Wei, Ping Yun-Xia, Yang Jun, Xue Zhong-Ying, Wei Xing, Wu Ai-Min, Yu Wen-Jie, Zhang Bo.Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing. Acta Physica Sinica, 2021, 70(11): 116801.doi:10.7498/aps.70.20202118 |
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Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian.Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses. Acta Physica Sinica, 2021, 70(16): 166101.doi:10.7498/aps.70.20210515 |
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Jiang Hang, Zhou Yu-Rong, Liu Feng-Zhen, Zhou Yu-Qin.Effect of annealing treatment on characteristics of surface plasmon resonance for indium tin oxide. Acta Physica Sinica, 2018, 67(17): 177802.doi:10.7498/aps.67.20180435 |
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Tao Ze-Hua, Dong Hai-Ming.Electron screening lengths and plasma spectrum in single layer MoS2. Acta Physica Sinica, 2017, 66(24): 247701.doi:10.7498/aps.66.247701 |
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Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie.Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica, 2016, 65(10): 104202.doi:10.7498/aps.65.104202 |
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Sun Kai, He Zhi-Qun, Liang Chun-Jun.Effect of multiple temperature-step annealing on the performances of polymer solar cells. Acta Physica Sinica, 2014, 63(4): 048801.doi:10.7498/aps.63.048801 |
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
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Gao Li-Yan, Zhao Su-Ling, Xu Zheng, Zhang Fu-Jun, Sun Qin-Jun, Zhang Tian-Hui, Yan Guang, Xu Xu-Rong.Influence of spin-coating rate and annealing method of water-soluble CuPc on blue organic light-emitting devices performance. Acta Physica Sinica, 2011, 60(3): 037203.doi:10.7498/aps.60.037203 |
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Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji.Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica, 2009, 58(11): 7878-7883.doi:10.7498/aps.58.7878 |
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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue.Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica, 2009, 58(1): 536-540.doi:10.7498/aps.58.536 |
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Du Zheng-Cong, Tang Bin, Li Ke.The hybrid annealed particle filter. Acta Physica Sinica, 2006, 55(3): 999-1004.doi:10.7498/aps.55.999 |
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Liu Yi, Liu Lin, Wang Jun, Zhao Hui, Rong Li-Xia, Dong Bao-Zhong.In-situ study on structural relaxation of Zr55Cu30Al1 0Ni5bulk amorphous alloy by SAXS. Acta Physica Sinica, 2003, 52(9): 2219-2222.doi:10.7498/aps.52.2219 |
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WANG HUAN-RONG, TENG XIN-YING, SHI ZHI-QIANG, YE YI-FU, MIN GUANG-HUI.STUDY ON MICROSTRUCTURE AND CRYSTALLIZATION OF AMORPHOUS Cu56Zr44 ALLOY BY MEANS OF ISOTHERMAL ANNEALING. Acta Physica Sinica, 2001, 50(11): 2192-2197.doi:10.7498/aps.50.2192 |
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