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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong.Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica, 2023, 72(13): 138501.doi:10.7498/aps.72.20230207 |
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Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li.A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501.doi:10.7498/aps.71.20220879 |
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Liu Jia-Wen, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2021, 70(15): 157302.doi:10.7498/aps.70.20202156 |
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong.Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102.doi:10.7498/aps.70.20200921 |
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
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Wang Tian-Shu, Zhang Rui-De, Guan Zhe, Ba Ke, Zu Yun-Xiao.Properties of memristor in RLC circuit and diode circuit. Acta Physica Sinica, 2014, 63(17): 178101.doi:10.7498/aps.63.178101 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Zuo Ying-Hong, Wang Jian-Guo, Fan Ru-Yu.Influence of diode gap distance on space charge effects in field emission. Acta Physica Sinica, 2012, 61(21): 215202.doi:10.7498/aps.61.215202 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin.Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica, 2012, 61(2): 027202.doi:10.7498/aps.61.027202 |
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
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Zhang Lin, Yang Fei, Xiao Jian, Gu Wen-Ping, Qiu Yan-Zhang.Power characteristics of SiC bipolar-mode JFET. Acta Physica Sinica, 2011, 60(10): 107304.doi:10.7498/aps.60.107304 |
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men.Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103.doi:10.7498/aps.60.017103 |
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808.doi:10.7498/aps.60.037808 |
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Li Qi, Zhang Bo, Li Zhao-Ji.A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica, 2008, 57(3): 1891-1896.doi:10.7498/aps.57.1891 |
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
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Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |
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Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |
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