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Wang Fu, Zhou Yi, Gao Shi-Xin, Duan Zhen-Gang, Sun Zhi-Peng, Wang Jun, Zou Yu, Fu Bao-Qin.Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide. Acta Physica Sinica, 2022, 71(3): 036501.doi:10.7498/aps.71.20211434 |
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.Effects of point defects on thermal conductivity in cubic silicon carbide: A molecular dynamics study. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211434 |
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Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping.Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica, 2021, 70(16): 162401.doi:10.7498/aps.70.20210503 |
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Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng.Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica, 2020, 69(11): 117701.doi:10.7498/aps.69.20200232 |
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei.Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica, 2019, 68(15): 158101.doi:10.7498/aps.68.20190350 |
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Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong.Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica, 2018, 67(18): 182401.doi:10.7498/aps.67.20181095 |
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Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng.High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica, 2015, 64(16): 168501.doi:10.7498/aps.64.168501 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang.Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica, 2012, 61(17): 177201.doi:10.7498/aps.61.177201 |
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Fang Chao, Liu Ma-Lin.The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica, 2012, 61(9): 097802.doi:10.7498/aps.61.097802 |
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Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
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Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang.Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica, 2010, 59(11): 8113-8117.doi:10.7498/aps.59.8113 |
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Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong.Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica, 2009, 58(7): 4941-4947.doi:10.7498/aps.58.4941 |
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Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong.High mobility polymer thin-film transistors. Acta Physica Sinica, 2009, 58(12): 8566-8570.doi:10.7498/aps.58.8566 |
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong.3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica, 2004, 53(9): 3225-3228.doi:10.7498/aps.53.3225 |
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming.Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306.doi:10.7498/aps.52.302 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING.MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica, 2001, 50(7): 1350-1354.doi:10.7498/aps.50.1350 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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