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Tu Cheng-Wei, Tian Jin-Peng, Wu Ming-Xiao, Liu Peng-Yi.Influence of PTCBI as cathode modification on the performances of Rubrene/C70 based organic solar cells. Acta Physica Sinica, 2015, 64(20): 208801.doi:10.7498/aps.64.208801 |
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Zhang Shan, Hu Xiao-Ning.Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica, 2011, 60(6): 068502.doi:10.7498/aps.60.068502 |
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Li Bing, Liu Cai, Feng Liang-Huan, Zhang Jing-Quan, Zheng Jia-Gui, Cai Ya-Ping, Cai Wei, Wu Li-Li, Li Wei, Lei Zhi, Zeng Guang-Gen, Xia Geng-Pei.Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells. Acta Physica Sinica, 2009, 58(3): 1987-1991.doi:10.7498/aps.58.1987 |
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Zhao You-Wen, Dong Zhi-Yuan.Generation and suppression of deep level defects in InP. Acta Physica Sinica, 2007, 56(3): 1476-1479.doi:10.7498/aps.56.1476 |
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Yang Jun, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Wang Bo.Influence of deep level defects on electrical compensation in semi-insulating InP materials. Acta Physica Sinica, 2007, 56(2): 1167-1171.doi:10.7498/aps.56.1167 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
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Huang Yang-Cheng, Liu Da-Fu, Liang Jin-Sui, Gong Hai-Mei.Low frequency noise study on short wavelength HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(5): 2261-2266.doi:10.7498/aps.54.2261 |
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YUAN XIAN-ZHANG, PEI HUI-YUAN, LU WEI, LI NING, SHI GUO-LIANG, FANG JIA-XIONG, SHEN XUE-CHU.INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te. Acta Physica Sinica, 2001, 50(4): 775-778.doi:10.7498/aps.50.775 |
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LU LI-WU, ZHANG YAN-HUA, YANG GUO-WEN, WANG ZHAN-GUO, J.WANG, Y.WANG, WEIKUN GE.CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES. Acta Physica Sinica, 1998, 47(8): 1339-1345.doi:10.7498/aps.47.1339 |
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ZHOU WEI-YA, CHANG BAO-HE, QIAN LU-XI.GROWTH OF LARGER SIZE C60 AND C70 SINGLE CRYSTALS BY NUCLEATION CONTROL. Acta Physica Sinica, 1998, 47(2): 346-352.doi:10.7498/aps.47.346 |
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ZHU YAN-QIU, LI CHANG-PING, LIANG JI, GAO ZHI-DONG, ZONG JON-FENG, WEI BING-QING, WU DE-HAI, HUI MEMG-JUN.STUDY ON THE CRYSTAL MORPHOLOGY OF C60/C70. Acta Physica Sinica, 1994, 43(4): 566-569.doi:10.7498/aps.43.566 |
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QIU SU-JUAN, CHEN KAI-MAO, WU LAN-QING.DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE. Acta Physica Sinica, 1993, 42(8): 1304-1310.doi:10.7498/aps.42.1304 |
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QIAO HAO, XU ZHI-ZHONG, ZHANG KAI-MING.DEEP LEVELS IN STRAINED Si AND Ge. Acta Physica Sinica, 1993, 42(11): 1830-1835.doi:10.7498/aps.42.1830 |
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LI XIAN-HUANG, LU FANG, SUN HENG-HUI.VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159.doi:10.7498/aps.42.1153 |
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WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN.THE EFFECT OF DEEP LEVEL TRAP ON PHOTO-TRANSIENT CHARACTERISTICS, EQUIVALENT NOISE CURRENT AND INCREMENT OF DRAIN CURRENT FOR FET. Acta Physica Sinica, 1987, 36(10): 1264-1272.doi:10.7498/aps.36.1264 |
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FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG.RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica, 1985, 34(12): 1559-1566.doi:10.7498/aps.34.1559 |
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YAO XIU-CHEN, QIN GUO-GANG, ZENG SHU-RONG, YUAN MIN-HUA.A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS. Acta Physica Sinica, 1984, 33(3): 377-390.doi:10.7498/aps.33.377 |
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