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Hu Chen-Yang, Liang Jia-Luo, Zheng Ri-Yi, Lu Jiu-Yang, Deng Wei-Yin, Huang Xue-Qin, Liu Zheng-You.One-dimensional synthetic waterborne phononic crystals. Acta Physica Sinica, 2024, 73(10): 104301.doi:10.7498/aps.73.20240298 |
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Niu Di, Jiang Han.Influence of interface kinetics parameters on the overall fluctuation instability of the interface morphology of deep cell crystal. Acta Physica Sinica, 2022, 71(16): 168101.doi:10.7498/aps.71.20220322 |
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Dai Mei-Qin, Zhang Qing-Yue, Zhao Qiu-Ling, Wang Mao-Rong, Wang Xia.Controllable characteristics of interface states in one-dimensional inverted symmetric photonic structures. Acta Physica Sinica, 2022, 71(20): 204205.doi:10.7498/aps.71.20220383 |
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Gao Hui-Fen, Zhou Xiao-Fang, Huang Xue-Qin.Zak phase induced interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2022, 71(4): 044301.doi:10.7498/aps.71.20211642 |
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.Zak phase induces interface states in two-dimensional phononic crystals. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211642 |
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Dong Lei, Yang Jian-Qun, Zhen Zhao-Feng, Li Xing-Ji.Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors. Acta Physica Sinica, 2020, 69(1): 018502.doi:10.7498/aps.69.20191151 |
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Li Guang-Hui, Xia Wan-Ying, Sun Xian-Wen.Resistance switching of La doped SrTiO3 single crystals. Acta Physica Sinica, 2018, 67(18): 187303.doi:10.7498/aps.67.20180904 |
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Wang Qing-Hai, Li Feng, Huang Xue-Qin, Lu Jiu-Yang, Liu Zheng-You.The topological phase transition and the tunable interface states in granular crystal. Acta Physica Sinica, 2017, 66(22): 224502.doi:10.7498/aps.66.224502 |
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Jia Zi-Yuan, Yang Yu-Ting, Ji Li-Yu, Hang Zhi-Hong.Deterministic interface states in photonic crystal with graphene-allotrope-like complex unit cells. Acta Physica Sinica, 2017, 66(22): 227802.doi:10.7498/aps.66.227802 |
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Huang Xue-Qin, Chan Che-Ting.Dirac-like cones at k=0. Acta Physica Sinica, 2015, 64(18): 184208.doi:10.7498/aps.64.184208 |
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer. Acta Physica Sinica, 2012, 61(24): 247302.doi:10.7498/aps.61.247302 |
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Cao Jian-Min, He Wei, Huang Si-Wen, Zhang Xu-Lin.Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET. Acta Physica Sinica, 2012, 61(21): 217305.doi:10.7498/aps.61.217305 |
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
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Li Zhong-He, Liu Hong-Xia, Hao Yue.Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica, 2006, 55(2): 820-824.doi:10.7498/aps.55.820 |
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming.Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306.doi:10.7498/aps.52.302 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica, 2001, 50(12): 2434-2438.doi:10.7498/aps.50.2434 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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JIA WEI-YI, ZHANG PENG-XIANG.ON THE OPTIMUM COMPENSATION OF THE TEMPERATURE INSTABILITIES CAUSED BY THE MAGNETOCRYSTALLINE ANISOTROPY FIELD IN YIG MICROWAVE DEVICES. Acta Physica Sinica, 1976, 25(3): 254-264.doi:10.7498/aps.25.254 |
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