| [1] |
Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li.A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501.doi:10.7498/aps.71.20220879 |
| [2] |
Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong.Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102.doi:10.7498/aps.70.20200921 |
| [3] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
| [4] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301 |
| [5] |
Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo.Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica, 2014, 63(17): 177201.doi:10.7498/aps.63.177201 |
| [6] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu.Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(7): 077103.doi:10.7498/aps.62.077103 |
| [7] |
Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong.Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502.doi:10.7498/aps.60.058502 |
| [8] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men.Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103.doi:10.7498/aps.60.017103 |
| [9] |
Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808.doi:10.7498/aps.60.037808 |
| [10] |
Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
| [11] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming.The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2009, 58(1): 494-497.doi:10.7498/aps.58.494 |
| [12] |
Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
| [13] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
| [14] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897 |
| [17] |
Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
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Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin.. Acta Physica Sinica, 2002, 51(2): 304-309.doi:10.7498/aps.51.304 |
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Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |
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Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |
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