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Zhang Yu-Han, Zhao Xin-Qian, Liang Ying-Shuang, Guo Yuan-Yuan.Numerical simulation of inductively coupled Ar/O2plasma. Acta Physica Sinica, 2024, 73(13): 135201.doi:10.7498/aps.73.20240436 |
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Cao Li-Yang, Ma Xiao-Ping, Deng Li-Li, Lu Man-Ting, Xin Yu.Axial diagnosis of radio-frequency capacitively coupled Ar/O2plasma. Acta Physica Sinica, 2021, 70(11): 115204.doi:10.7498/aps.70.20202113 |
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Yang Yu, Tang Cheng-Shuang, Zhao Yi-Fan, Yu Yi-Qing, Xin Yu.Electronegativity of capacitively coupled Ar+O2 plasma excited at very high frequency. Acta Physica Sinica, 2017, 66(18): 185202.doi:10.7498/aps.66.185202 |
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He Man-Li, Wang Xiao, Zhang Ming, Wang Li, Song Rui.Vibrational distribution of H2 (D2 and T2) molecules in low temperature plasma. Acta Physica Sinica, 2014, 63(12): 125201.doi:10.7498/aps.63.125201 |
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Li Rui, He Zhi-Bing, Yang Xiang-Dong, He Xiao-Shan, Niu Zhong-Cai, Jia Xiao-Qin.Influence of working pressure on the state of H2/C4H8 glowing discharge plasma. Acta Physica Sinica, 2013, 62(5): 058104.doi:10.7498/aps.62.058104 |
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Zheng Shi-Jian, Ding Fang, Xie Xin-Hua, Tang Zhong-Liang, Zhang Yi-Chuan, Li Huan, Yang Kuan, Zhu Xiao-Dong.A diagnosis of gas-phase processes in a high pressure DC CH4/H2 plasma. Acta Physica Sinica, 2013, 62(16): 165204.doi:10.7498/aps.62.165204 |
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang.Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica, 2012, 61(2): 028104.doi:10.7498/aps.61.028104 |
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Li Rui, He Zhi-Bing, He Xiao-Shan, Niu Zhong-Cai, Yang Xiang-Dong.Influence of radio-frequency power on the state of H2/C4H8 glowing discharge plasma. Acta Physica Sinica, 2012, 61(21): 215203.doi:10.7498/aps.61.215203 |
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Lan Yu-Dan, He Li-Ming, Ding Wei, Wang Feng.Evolution of H2/O2 mixture plasma under different initial temperatures. Acta Physica Sinica, 2010, 59(4): 2617-2621.doi:10.7498/aps.59.2617 |
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Zhang Hong-Wei, Chen Gai-Rong, Zhang Li-Wei, Lu Jing-Xiao, Wen Shu-Tang.A kinetic model for silicon film growth by silane/hydrogen glow discharge. Acta Physica Sinica, 2010, 59(7): 4901-4910.doi:10.7498/aps.59.4901 |
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Zhang Li-Ping, Zhang Jian-Jun, Zhang Xin, Shang Ze-Ren, Hu Zeng-Xin, Zhang Ya-Ping, Geng Xin-Hua, Zhao Ying.Investigation of microcrystalline silicon germanium prepared by hydrogen and helium gas mixture diluted VHFPA-RTCVD. Acta Physica Sinica, 2008, 57(11): 7338-7343.doi:10.7498/aps.57.7338 |
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying.The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica, 2005, 54(8): 3805-3809.doi:10.7498/aps.54.3805 |
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Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan.Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD. Acta Physica Sinica, 2005, 54(1): 269-273.doi:10.7498/aps.54.269 |
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Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
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Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui.Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica, 2004, 53(5): 1558-1561.doi:10.7498/aps.53.1558 |
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Hu Yue-Hui, Yin Sheng-Yi, Chen Guang-Hua, Wu Yue-Ying, Zhou Xiao-Ming, Zhou Jian-Er, Wang Qing, Zhang Wen-Li.Investigation of a-Si:H film characteristics influenced by magnetic field gradient in MWECR CVD plasma system. Acta Physica Sinica, 2004, 53(7): 2263-2269.doi:10.7498/aps.53.2263 |
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Yang Hui-Dong, Wu Chun-Ｙa, Zhao Ying, Xue Jun-Ｍing, Geng Xin-Ｈua, Xiong Shao-Ｚhen.Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD. Acta Physica Sinica, 2003, 52(11): 2865-2869.doi:10.7498/aps.52.2865 |
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FU GUANG-SHENG, WANG JIN-GUO, LI XIAO-WEI, HAN LI, Lü FU-RUN.A STUDY ON REACTION KINETICS OF THE RADICALS PRODUCED IN THE LASER-INDUCED SILANE PLASMA. Acta Physica Sinica, 1991, 40(12): 2024-2031.doi:10.7498/aps.40.2024 |
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