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Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica, 2023, 72(19): 198501.doi:10.7498/aps.72.20230553 |
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Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang.Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica, 2021, 70(13): 135102.doi:10.7498/aps.70.20210086 |
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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He.The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, 69(7): 077302.doi:10.7498/aps.69.20191931 |
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Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang.Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica, 2015, 64(23): 237302.doi:10.7498/aps.64.237302 |
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Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu.Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302.doi:10.7498/aps.63.117302 |
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Duan Bao-Xing, Yang Yin-Tang.Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica, 2014, 63(5): 057302.doi:10.7498/aps.63.057302 |
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer. Acta Physica Sinica, 2012, 61(24): 247302.doi:10.7498/aps.61.247302 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302.doi:10.7498/aps.61.227302 |
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Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu.Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica, 2011, 60(9): 097101.doi:10.7498/aps.60.097101 |
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
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Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue.The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica, 2009, 58(5): 3409-3415.doi:10.7498/aps.58.3409 |
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Wang Chong, Quan Si, Zhang Jin-Feng, Hao Yue, Feng Qian, Chen Jun-Feng.Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT. Acta Physica Sinica, 2009, 58(3): 1966-1970.doi:10.7498/aps.58.1966 |
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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, Hao Yue.Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric. Acta Physica Sinica, 2009, 58(1): 536-540.doi:10.7498/aps.58.536 |
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Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue.Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(1): 467-471.doi:10.7498/aps.57.467 |
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Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng.Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461.doi:10.7498/aps.57.2456 |
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Fan Long, Hao Yue.The effect of radiation induced strain relaxation on electric performance of AlmGa1－mN/GaN HEMT. Acta Physica Sinica, 2007, 56(6): 3393-3399.doi:10.7498/aps.56.3393 |
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Wang Chong, Feng Qian, Hao Yue, Wan Hui.Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica, 2006, 55(11): 6085-6089.doi:10.7498/aps.55.6085 |
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Li Dong-Lin, Zeng Yi-Ping.Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica, 2006, 55(7): 3677-3682.doi:10.7498/aps.55.3677 |
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