| [1] |
Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He.Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica, 2023, 72(13): 137701.doi:10.7498/aps.72.20230113 |
| [2] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping.NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica, 2021, 70(12): 128502.doi:10.7498/aps.70.20210154 |
| [3] |
Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong.Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica, 2013, 62(13): 138101.doi:10.7498/aps.62.138101 |
| [4] |
Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao.Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica, 2013, 62(2): 026801.doi:10.7498/aps.62.026801 |
| [5] |
Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi.Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2010, 59(1): 504-507.doi:10.7498/aps.59.504 |
| [6] |
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui.Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957.doi:10.7498/aps.58.7952 |
| [7] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
| [8] |
Zhou Mei, Chang Qing-Ying, Zhao De-Gang.A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553.doi:10.7498/aps.57.2548 |
| [9] |
Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di.Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica, 2007, 56(2): 1036-1040.doi:10.7498/aps.56.1036 |
| [10] |
Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua.Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica, 2007, 56(3): 1563-1567.doi:10.7498/aps.56.1563 |
| [11] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
| [12] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
| [13] |
You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei.Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica, 2006, 55(12): 6600-6605.doi:10.7498/aps.55.6600 |
| [14] |
Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei.Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica, 2006, 55(10): 5216-5220.doi:10.7498/aps.55.5216 |
| [15] |
Wang Xiao-Dong, Wu Xu-Ming, Wang Qing, Cao Yu-Lian, He Guo-Rong, Tan Man-Qing.Optical characteristics of DBR with inhomogeneous graded interfaces. Acta Physica Sinica, 2006, 55(10): 4983-4986.doi:10.7498/aps.55.4983 |
| [16] |
Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua.A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica, 2004, 53(2): 646-650.doi:10.7498/aps.53.646 |
| [17] |
Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi.Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica, 2004, 53(6): 1868-1872.doi:10.7498/aps.53.1868 |
| [18] |
Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun.A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica, 2003, 52(10): 2632-2637.doi:10.7498/aps.52.2632 |
| [19] |
Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju.AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica, 2003, 52(12): 2985-2988.doi:10.7498/aps.52.2985 |
| [20] |
ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
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