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Li Xiang-Cao, Liu Bao-An, Li Meng, Yan Chun-Yan, Ren Jie, Liu Chang, Ju Xin.Photoluminescence spectrum study of defects of potassium dihydrogen phosphate crystals irradiated by different laser fluences. Acta Physica Sinica, 2020, 69(17): 174208.doi:10.7498/aps.69.20200482 |
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Wang Qiang, Yang Li-Xue, Liu Bei-Yun, Yan Yin-Zhou, Chen Fei, Jiang Yi-Jian.Thermal regulation mechanism of photoluminescence in intrinsic acceptor-rich ZnO microtube. Acta Physica Sinica, 2020, 69(19): 197701.doi:10.7498/aps.69.20200655 |
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Wei Xiao-Xu, Cheng Ying, Huo Da, Zhang Yu-Han, Wang Jun-Zhuan, Hu Yong, Shi Yi.PL enhancement of MoS2 by Au nanoparticles. Acta Physica Sinica, 2014, 63(21): 217802.doi:10.7498/aps.63.217802 |
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Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate. Acta Physica Sinica, 2013, 62(7): 076108.doi:10.7498/aps.62.076108 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Wang Kai-Yue, Li Zhi-Hong, Gao Kai, Zhu Yu-Mei.Photoluminescence studies of electron irradiated diamond. Acta Physica Sinica, 2012, 61(9): 097803.doi:10.7498/aps.61.097803 |
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Liu Jian, Zhang Hong, Zhang Chun-Yuan, Zhang Hui-Liang.Charged excitons in parabolic quantum-well wires under magnetic filed. Acta Physica Sinica, 2011, 60(7): 077301.doi:10.7498/aps.60.077301 |
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Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu.Optical properties of exciton and charged exciton in undoped ZnSe/BeTe type-Ⅱ quantum wells under high magnetic fields. Acta Physica Sinica, 2011, 60(4): 047805.doi:10.7498/aps.60.047805 |
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Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu, Lu Yun.Interface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2010, 59(11): 7986-7990.doi:10.7498/aps.59.7986 |
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Liu Chun-Ming, Fang Li-Mei, Zu Xiao-Tao.Photoluminescence and magnetic properties of cobalt doped SnO2 nano-powder. Acta Physica Sinica, 2009, 58(2): 936-940.doi:10.7498/aps.58.936 |
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Li Su-Mei, Song Shu-Mei, Lü Ying-Bo, Wang Ai-Fang, Wu Ai-Ling, Zheng Wei-Min.Photoluminescence study of quantum confined acceptors. Acta Physica Sinica, 2009, 58(7): 4936-4940.doi:10.7498/aps.58.4936 |
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Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao.Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica, 2008, 57(4): 2481-2485.doi:10.7498/aps.57.2481 |
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Ji Zi-Wu, Mino Hirofumi, Kojima Eiji, Akimoto Ryoichi, Takeyama Shojiro.Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2008, 57(5): 3260-3266.doi:10.7498/aps.57.3260 |
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Ji Zi-Wu, Lu Yun, Chen Jin-Xiang, Mino Hirofumi, Akimoto Ryoichi, Takeyama Shojiro.Built-in electric field and a new type of charged excitons observed in modulation-doped ZnSe/BeTe type-Ⅱ quantum well. Acta Physica Sinica, 2008, 57(2): 1214-1219.doi:10.7498/aps.57.1214 |
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.Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriers. Acta Physica Sinica, 2007, 56(12): 7295-7299.doi:10.7498/aps.56.7295 |
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Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica, 2007, 56(8): 4955-4959.doi:10.7498/aps.56.4955 |
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
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Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143 |
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Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo.Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica, 2006, 55(3): 1379-1383.doi:10.7498/aps.55.1379 |
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Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
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