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Li Jian-Jun, Cui Yu-Zheng, Fu Cong-Le, Qin Xiao-Wei, Li Yu-Chang, Deng Jun.Optimization theory and application of epitaxial layer thickness uniformity in vertical MOCVD reaction chamber with multiple MO nozzles. Acta Physica Sinica, 2024, 73(4): 046801.doi:10.7498/aps.73.20231555 |
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Jiang Feng-Yi, Liu Jun-Lin, Zhang Jian-Li, Xu Long-Quan, Ding Jie, Wang Guang-Xu, Quan Zhi-Jue, Wu Xiao-Ming, Zhao Peng, Liu Bi-Yu, Li Dan, Wang Xiao-Lan, Zheng Chang-Da, Pan Shuan, Fang Fang, Mo Chun-Lan.Semiconductor yellow light-emitting diodes. Acta Physica Sinica, 2019, 68(16): 168503.doi:10.7498/aps.68.20191044 |
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Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong.Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates. Acta Physica Sinica, 2018, 67(7): 076801.doi:10.7498/aps.67.20172581 |
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Li Zhong-Hui, Luo Wei-Ke, Yang Qian-Kun, Li Liang, Zhou Jian-Jun, Dong Xun, Peng Da-Qing, Zhang Dong-Guo, Pan Lei, Li Chuan-Hao.Surface morphology improvement of homoepitaxial GaN grown on free-standing GaN substrate by metalorganic chemical vapor deposition. Acta Physica Sinica, 2017, 66(10): 106101.doi:10.7498/aps.66.106101 |
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Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica, 2015, 64(4): 047202.doi:10.7498/aps.64.047202 |
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Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou.Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method. Acta Physica Sinica, 2014, 63(11): 118103.doi:10.7498/aps.63.118103 |
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Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2013, 62(8): 086102.doi:10.7498/aps.62.086102 |
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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin.Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001.doi:10.7498/aps.59.4996 |
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue.The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(8): 5705-5708.doi:10.7498/aps.58.5705 |
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Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(12): 8506-8510.doi:10.7498/aps.58.8506 |
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Yang Fan, Ma Jin, Kong Ling-Yi, Luan Cai-Na, Zhu Zhen.Structural， optical and electrical properties of Ga2（1-x）In2xO3 films prepared by metalorganic chemical vapor deposition. Acta Physica Sinica, 2009, 58(10): 7079-7082.doi:10.7498/aps.58.7079 |
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Wang Ye-An, Qin Fu-Wen, Wu Dong-Jiang, Wu Ai-Min, Xu Yin, Gu Biao.Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica, 2008, 57(1): 508-513.doi:10.7498/aps.57.508 |
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Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui.Poly-SiGe films prepared by metal-induced growth using UHVCVD system. Acta Physica Sinica, 2006, 55(7): 3756-3759.doi:10.7498/aps.55.3756 |
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Wang Hao, Zeng Gu-Cheng, Liao Chang-Jun, Cai Ji-Ye, Zheng Shu-Wen, Fan Guang-Han, Chen Yong, Liu Song-Hao.Study on the metamorphosis of InP self-organized islands grown on GaxxIn1-x1-xP buffer layers. Acta Physica Sinica, 2005, 54(4): 1726-1730.doi:10.7498/aps.54.1726 |
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