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Liu Zhe, Wei Hao, Cui Hai-Hang, Sun Kai, Sun Bo-Hua.Analysis of GAAFET’s transient heat transport process based on phonon hydrodynamic equations. Acta Physica Sinica, 2024, 73(14): 144401.doi:10.7498/aps.73.20240491 |
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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
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Liu Jia-Wen, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2021, 70(15): 157302.doi:10.7498/aps.70.20202156 |
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Liu Guo-Qiang, Ke Ya-Jiao, Zhang Kong-Bin, He Xiong, Luo Feng, He Bin, Sun Zhi-Gang.Research progress of physical model of full-solid-state magnetic refrigeration system. Acta Physica Sinica, 2019, 68(21): 217501.doi:10.7498/aps.68.20191139 |
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Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing.Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica, 2016, 65(15): 158501.doi:10.7498/aps.65.158501 |
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Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu.The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica, 2013, 62(9): 098503.doi:10.7498/aps.62.098503 |
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Ren Xing-Rong, Chai Chang-Chun, Ma Zhen-Yang, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei.The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base. Acta Physica Sinica, 2013, 62(6): 068501.doi:10.7498/aps.62.068501 |
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Zhang Ying, Liu Lan-Qin, Wang Wen-Yi, Huang Wan-Qing, Xie Xu-Dong, Zhu Qi-Hua.Physical modeling and caculation method of laser pulse superposition in multi-pass amplification process. Acta Physica Sinica, 2013, 62(6): 064208.doi:10.7498/aps.62.064208 |
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Mi Guang-Bao, Li Pei-Jie, Huang Xu, Cao Chun-Xiao.Relationship between liquid structure and property IIIresidual bond theoretical model. Acta Physica Sinica, 2012, 61(18): 186106.doi:10.7498/aps.61.186106 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Zhou Qing, He Xiao-Dong, Hu Yue.A universal cryptosystem based on two simple physical models. Acta Physica Sinica, 2011, 60(9): 094701.doi:10.7498/aps.60.094701 |
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Zhou Qing, Chen Gang, Hu Yue.A cryptosystem based on simple physical models. Acta Physica Sinica, 2011, 60(4): 044701.doi:10.7498/aps.60.044701 |
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Zhu Qi, Pan Bai-Liang, Chen Li, Wang Ya-Juan, Zhang Xun-Yi.A kinetic model for optically pumped cesium vapor laser. Acta Physica Sinica, 2010, 59(3): 1797-1801.doi:10.7498/aps.59.1797 |
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Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin.A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique. Acta Physica Sinica, 2009, 58(12): 8584-8590.doi:10.7498/aps.58.8584 |
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Zhong Wen-Zhen, He Ke-Jing, Zhou Zhao-Yao, Xia Wei, Li Yuan-Yuan.Physical model and simulation system of powder packing. Acta Physica Sinica, 2009, 58(13): 21-S28.doi:10.7498/aps.58.21 |
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica, 2007, 56(2): 1105-1109.doi:10.7498/aps.56.1105 |
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Liu Lan-Qin, Su Jing-Qin, Luo Bin, Wang Wen-Yi, Jing Feng, Wei Xiao-Feng.Physical modeling of broadband pulsed laser amplification process based on hybrid-widened linewidth. Acta Physica Sinica, 2007, 56(11): 6749-6753.doi:10.7498/aps.56.6749 |
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min.A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica, 2006, 55(7): 3617-3621.doi:10.7498/aps.55.3617 |
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Liu Hai-Wen, Sun Xiao-Wei, Cheng Zhi-Qun, Che Yan-Feng, Li Zheng-Fan.A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model. Acta Physica Sinica, 2003, 52(9): 2298-2303.doi:10.7498/aps.52.2298 |
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